10
duct *., One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
STW8NA80
STH8NA80FI
N- CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
PRELIMINARY DATA
TYPE
STW8NA80
STH8NA80FI
VDSS
RDS(on)
ID
800 V
800 V
< 1.50
Q.
<
1.50 n
7.2 A
4.5 A
TYPICAL R
D
s(
0
n) = 1.3 Q
+ 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100°C
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The op-
timized cell layout coupled with a new proprietary
edge termination concur to give the device low
RDS(on) and gate charge, unequalled rug-
gednessand superior switching performance.
APPLICATIONS
. HIGH CURRENT, HIGH SPEED SWITCHING
. SWITCH MODE POWER SUPPLIES (SMPS)
. DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STW8NA80
VDS
TO-247
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
Q(2)
Unit
STH8NA80FI
800
800
V
V
V
4.5
2.8
A
A
A
W
Drain-source Voltage (VQS
=
0)
VDGR
VGS
ID
ID
Drain- gate Voltage (Res = 20 kfi)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 °C
Drain Current (continuous) at T
c
= 100 °C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 °C
Derating Factor
7.2
4.5
± 30
IDM(')
Plot
28.8
175
1.4
—
28.8
70
0.56
4000
W/°C
V
°C
°C
V,so
Tstg
Insulation Withstand Voltage (DC)
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
T,
• ) Pulse width limited by safe operating area
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
STW8NA80
STH8NA80FI
THERMAL DATA
TO-247
Rthj-case
Rthj-amb
Rthc-sink
ISOWATT218
1.78
30
0.1
300
°C/W
°C/W
°C/W
°C
Thermal Resistance Junction-case
Max
0.71
I,
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
IAR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T, max, 5 < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
7.2
700
Unit
A
mj
ELECTRICAL CHARACTERISTICS
(Tease = 25 °C unless otherwise specified)
OFF
Symbol
V(BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
l
D
=250^iA
V
GS
=0
T
C
=100°C
Min.
800
Typ.
Max.
Unit
V
IDSS
IGSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (V
G
s = 0) V
DS
= Max Rating
Gate-body Leakage
Current (Vos = 0)
VGS = ± 30 V
50
500
100
HA
UA
nA
ON(*)
Symbol
VcS(Ih)
RDS(on)
Parameter
Gate Threshold Voltage VDS = V
GS
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
ID = 250 ^A
I
D
= 4A
Min.
2.25
Typ.
3
1.3
Max.
3.75
1.5
Unit
V
Q
A
VGS = 10V
VDS
>
iD(on)
lD(on) * RDS(on)max
7.2
VGS = 10 V
DYNAMIC
Symbol
9fs (*)
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > lD(on) X RDS(on)max
ID = 4 A
Min.
4.5
Typ.
7.9
1750
188
50
Max.
Unit
S
c
iss
Coss
Crss
VDS = 25 V
f = 1 MHz
VGS = 0
2300
245
70
PF
pF
pF
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