VHF 85
VHF 125
Half Controlled Single Phase
Rectifier Bridge, B2HKF
with Freewheeling Diode
I
dAV
= 82/123 A
V
RRM
= 1200-1600 V
E~
V
RSM
V
DSM
V
1300
1500
1700
V
RRM
V
DRM
V
1200
1400
1600
VHF 85-12io7
VHF 85-14io7
VHF 125-12io7
VHF 125-14io7
VHF 125-16io7
Type
E
C
A
2
1
C~
1
B
B-
2
A+
Symbol
I
dAV
I
FRMS
, I
TRMS
I
FSM
, I
TSM
Conditions
T
C
= 85°C; module
per leg
T
VJ
= 45°C;
V
R
= 0 V;
T
VJ
= T
VJM
;
V
R
= 0 V;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
VHF 85
VHF 125
Features
1000
1070
-o
1350
1450
11200
10750
9100
8830
150
500
1000
10
< 10
< 5
< 1
0.5
1150
1230
1500
1600
u
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/µs
A/µs
82
58
123
89
I
2
t
(di/dt)
cr
a
T
VJ
= T
VJM
;
repetitive; I
T
= 50 A;
f = 400 Hz; t
P
= 200 µs;
V
D
=
2
/
3
V
DRM
;
s
T
VJ
= T
VJM
;
V
R
= 0;
e
5000
4750
T
VJ
= 45°C;
V
R
= 0 V;
6600
6280
h
I
G
= 0.3 A;
non repetitive;
di
G
/dt = 0.3 A/µs; I
T
=
1
/
3
I
dAV
(dv/dt)
cr
V
RGM
P
GM
t
A
A
V/µs
V
W
W
W
W
°C
°C
°C
V~
V~
15
54
27
6.5
• Package with screw terminals
• Isolation voltage 3000 V~
• Planar passivated chips
• UL listing applied for
Applications
• DC motor control
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power cycling
Dimensions in mm (1 mm = 0.0394")
M6x12
p
T
VJ
= T
VJM
;
I
T
= I
TAVM
;
t
p
= 30 µs
t
p
= 500 µs
t
p
= 10ms
94
80
72
26
26
P
GAVM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
50/60 Hz RMS; t = 1 min
I
ISOL
≤
1 mA;
t=1s
Mounting torque (M6)
Terminal connection torque (M6)
typ.
-40...+125
125
-40...+125
2500
3000
5
±15%
5
±15%
300
A +
3
B -
4
5
6
7
2
1
12
2.8 x 0.8
Nm
Nm
g
25
66
M6
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
20080227a
© 2008 IXYS All rights reserved
1-4
6 5 5
6.5
C ~
E ~
3
30
T
VJ
= T
VJM
; V
DR
=
2
/
3
V
DRM
;
R
GK
=
∞;
method 1 (linear voltage rise)
7
VHF 85
VHF 125
Symbol
I
R
, I
D
V
F
, V
T
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
R
thJC
R
thJK
d
S
d
A
a
Conditions
V
R
= V
RRM
; V
D
= V
DRM
; T
VJ
= T
VJM
T
VJ
= 25°C
I
F
; I
T
= 200 A; T
VJ
= 25°C
For power-loss calculations only
(T
VJ
= 125°C)
V
D
= 6 V;
V
D
= 6 V;
T
VJ
= T
VJM
;
T
VJ
= T
VJM
;
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
V
D
=
2
/
3
V
DRM
V
D
=
2
/
3
V
DRM
< 1.75
0.85
6
<
<
<
<
1.5
1.6
100
200
Characteristic Values
VHF 85
VHF 125
1000
T
VJ
= 25°C
< 5
< 0.3
< 1.57
0.85
3.5
mA
mA
V
V
mΩ
V
V
mA
mA
V
mA
mA
mA
μs
t
gd
typ.
100
Limit
10
< 0.2
<
5
< 450
< 200
<2
0.65
0.108
0.8
0.133
0.46
0.077
0.55
0.092
1
10
100
I
G
mA
1000
I
G
= 0.3 A; t
G
= 30 µs;
T
VJ
= 25°C; di
G
/dt = 0.3 A/µs
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
∞
T
VJ
= 25°C; V
D
= 1/2 V
DRM
;
I
G
= 0.3 A; di
G
/dt = 0.3 A/µs
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
Fig. 1 Gate trigger delay time
t
µs
I
T(OV)
------
ITSM
ITSM (A)
TVJ=45°C
TVJ=150°C
1000
u
K/W
K/W
K/W
K/W
mm
mm
m/s
2
1.6
1150
-o
10
9.4
50
1.4
1.2
e
1
0 V RRM
0.8
s
1/2 V RRM
0.6
1 V RRM
a
0.4
10
0
10
1
t[ms]
10
2
10
3
h
IXYS reserves the right to change limits, test conditions and dimensions.
p
Fig. 2 Surge overload current
per diode or thyristor
I
FSM
, I
TSM
: Crest value t: duration
20080227a
© 2008 IXYS All rights reserved
2-4
VHF 85
10
1: I
GT
, T
VJ
= 125°C
300
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
100
V
V
G
[A]
250 2:TVJ= 25°C
1:T VJ= 125°C
DC
[A]
80
sin.180°
rec.120°
rec.60°
rec.30°
200
60
3
1
1
4
2
5
6
150
40
100
20
4: P
GAV
= 0.5 W
I
GD
, T
VJ
= 125°C
0.1
10
0
10
1
10
2
5: P
GM
=
5W
6: P
GM
= 10 W
10
3
I
G
50
IF
0
10
4
ITAV
1
0.5
1
VF [V]
1.5
2
2
0
50
100
T (°C)
C
150
200
mA
Fig.3 Gate trigger characteristic
1
K/W
Fig. 4 Forward current vs. voltage trop
per diode or thyristor
Fig. 5 Maximum forward current
at case temperature
0.8
Z thJC
0.6
0.4
0.2
Z th
t[s]
300
[W]
PSCH 85
250
h
Fig. 6 Transient thermal impedance per thyristor or diode (calculated)
TC
80
85
90
p
200
0.39
95
100
105
150
0.67
100
50
PVTOT
0
20
ITAVM
40
DC
sin.180°
rec.120°
rec.60°
rec.30°
60
80 0
[A]
a
0.25
1.5
0.01
0.1
1
0.17 0.09 = RTHCA [K/W]
s
10
110
115
120
e
°C
125
50
Tamb
100
[K]
Fig. 7 Power dissipation vs. direct output current and ambient temperature
IXYS reserves the right to change limits, test conditions and dimensions.
20080227a
© 2008 IXYS All rights reserved
-o
150
u
Z thJK
t
3-4
VHF 125
10
1: I
GT
, T
VJ
= 125°C
300
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
140
V
V
G
[A]
250
1:T = 125°C
VJ
2:TVJ= 25°C
DC
[A]
120
sin.180°
rec.120°
rec.60°
100
rec.30°
200
80
3
1
1
4
2
5
6
150
60
100
40
4: P
GAV
= 0.5 W
I
GD
, T
VJ
= 125°C
0.1
10
0
10
1
10
2
5: P
GM
=
5W
6: P
GM
= 10 W
10
3
I
G
50
I
F
0
0.5
1
1
VF[V]
2
1.5
2
20
ITAV
0
50
100
T (°C)
C
150
200
mA
10
4
Fig. 3 Gate trigger characteristic
0.8
K/W
Fig. 4 Forward current vs. voltage trop
per diode or thyristor
Fig. 5 Maximum forward current
at case temperature
0.6
Z thJK
Z thJC
0.4
0.2
Z th
t[s]
p
400
[W]
PSCH 125
350
300
250
200
h
Fig. 6 Transient thermal impedance per thyristor or diode (calculated)
80
a
0.13 0.07
0.2
0.3
0.51
1.13
0.01
0.1
1
s
10
= RTHCA [K/W]
e
TC
85
90
95
100
105
150
100
50
PVTOT
0
25
ITAVM
75
DC
sin.180°
rec.120°
rec.60°
rec.30°
125 0
[A]
50
Tamb
100
[K]
Fig. 7 Power dissipation vs. direct output current and ambient temperature
IXYS reserves the right to change limits, test conditions and dimensions.
20080227a
316
© 2008 IXYS All rights reserved
-o
110
115
120
°C
125
150
u
t
4-4