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RT230PD_14

Description
Power Transistor
File Size451KB,33 Pages
ManufacturerRFHIC Corporation
Websitehttp://rfhic.com/
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RT230PD_14 Overview

Power Transistor

Power Transistor
Product Features
• 50 ~ 4000 MHz
• 18dB Gain@900MHz
• 34.5dBm P1dB@900MHz
• 47dBm Output IP3
• GaAs HFET
RT230PD
Applications
• CDMA,W-CDMA Medium Power Amplifier
• High Linearity Drive Amplifier
• ISM
• MMDS
• Wi-Fi, Wi-Max
Package Type : SP-12
Description
The RT230PD is designed for base stations and cell extenders and operating frequency range is from 50 ~ 4000MHz.
RT230PD is GaAs HFET in SP-12 type package which has superior performance against the heat at high temperature for its high
reliability. It also has high efficiency, high gain and has a strong advantage using it as drive device at high frequency.
RT230PD is 100% RF&DC tested.
Electrical Specifications
PARAMETER
Frequency Range
Gain
Input Return Loss
Output IP3
1dB Compression Point
Channel Power
Noise Figure
DC Current
Supply Voltage
UNIT
MHz
dB
dB
dBm
dBm
dBm
dB
mA
VDC
900
18
-15
47
34.5
27.5
2.5
450
9
TYPICAL
1900
16.5
-20
47
34.5
25.5
2.5
450
9
2600
14.5
-20
47
34
-
3.0
450
9
* Test Conditions : (V
d
= +9V, I
d
= 450mA, Ta=+25℃ )
* OIP3 is measured with two tones, at an output power of 20dBm/tone separated by 1MHz
Absolute Maximum Ratings
PARAMETER
Drain to Source Voltage
Gate to Source Voltage Range
Power Dissipation
Storage Temperature
Channel Temperature
UNIT
V
V
W
RATING
12
0 ~ -5.0
7.5
-65 ~ 175
175
SYMBOL
Vds
Vgs
Pt
Tstg
Tch
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
1
/
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All specifications may change without notice
Version 5.2

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