C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Renesas Electronics Corporation |
| package instruction | SUPER MINIMOLD, M04, 4 PIN |
| Contacts | 4 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 3 V |
| Maximum drain current (Abs) (ID) | 0.07 A |
| Maximum drain current (ID) | 0.015 A |
| FET technology | HETERO-JUNCTION |
| highest frequency band | KU BAND |
| JESD-30 code | R-PDSO-F4 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 4 |
| Operating mode | DEPLETION MODE |
| Maximum operating temperature | 125 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 0.125 W |
| Minimum power gain (Gp) | 10.5 dB |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | FLAT |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| NE3503M04-T2 | NE3503M04 | NE3503M04-T2B | |
|---|---|---|---|
| Description | C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET | C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET | C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET |
| Is it lead-free? | Contains lead | Contains lead | - |
| Is it Rohs certified? | incompatible | incompatible | - |
| Maker | Renesas Electronics Corporation | Renesas Electronics Corporation | - |
| package instruction | SUPER MINIMOLD, M04, 4 PIN | SUPER MINIMOLD, M04, 4 PIN | - |
| Contacts | 4 | 4 | - |
| Reach Compliance Code | unknow | unknow | - |
| ECCN code | EAR99 | EAR99 | - |
| Configuration | SINGLE | SINGLE | - |
| Minimum drain-source breakdown voltage | 3 V | 3 V | - |
| Maximum drain current (Abs) (ID) | 0.07 A | 0.07 A | - |
| Maximum drain current (ID) | 0.015 A | 0.015 A | - |
| FET technology | HETERO-JUNCTION | HETERO-JUNCTION | - |
| highest frequency band | KU BAND | KU BAND | - |
| JESD-30 code | R-PDSO-F4 | R-PDSO-F4 | - |
| JESD-609 code | e0 | e0 | - |
| Number of components | 1 | 1 | - |
| Number of terminals | 4 | 4 | - |
| Operating mode | DEPLETION MODE | DEPLETION MODE | - |
| Maximum operating temperature | 125 °C | 125 °C | - |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| Package shape | RECTANGULAR | RECTANGULAR | - |
| Package form | SMALL OUTLINE | SMALL OUTLINE | - |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | - |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | - |
| Maximum power consumption environment | 0.125 W | 0.125 W | - |
| Minimum power gain (Gp) | 10.5 dB | 10.5 dB | - |
| Certification status | Not Qualified | Not Qualified | - |
| surface mount | YES | YES | - |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - |
| Terminal form | FLAT | FLAT | - |
| Terminal location | DUAL | DUAL | - |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | - |
| transistor applications | AMPLIFIER | AMPLIFIER | - |
| Transistor component materials | SILICON | SILICON | - |
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