JMnic
Product Specification
Silicon NPN Power Transistors
2N6931 2N6932
DESCRIPTION
・With
TO-3PN package
・High
voltage ,high speed
APPLICATIONS
・Off-line
power supplies
・High-voltage
inverters
・Switching
regulators
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
PARAMETER
2N6931
V
CBO
Collector-base voltage
2N6932
2N6931
V
CEO
Collector-emitter voltage
2N6932
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Base current-peak
Emitter current
Emitter current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
400
8
10
15
5
7
15
22
150
150
-65~150
V
A
A
A
A
A
A
W
℃
℃
Open emitter
650
300
V
CONDITIONS
VALUE
450
V
UNIT
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6931
I
C
=0.2A ;L=25mH
2N6932
V
(BR)EBO
V
CEsat
V
BEsat
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
2N6931
I
CEV
Collector cut-off current
2N6932
I
EBO
h
FE
C
OB
Emitter cut-off current
DC current gain
Collector output capacitance
I
E
=50mA ;I
C
=0
I
C
=10A ;I
B
=2A
T
C
=100℃
I
C
=10A ;I
B
=2A
T
C
=100℃
V
CE
=450V; V
BE
=-1.5V
T
C
=100℃
V
CE
=650V; V
BE
=-1.5V
T
C
=100℃
V
EB
=8V; I
C
=0
I
C
=10A ; V
CE
=3V
f=1MHz;V
CB
=10V
CONDITIONS
2N6931 2N6932
MIN
300
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
400
8
1.0
2.0
1.5
1.5
0.1
1.0
mA
0.1
1.0
2
8
80
35
300
pF
mA
V
V
V
Switching times resistive load
t
d
t
r
t
stg
t
f
Delay time
Rise time
Storage time
Fall time
I
C
=10A; I
B1
=-I
B2
=2A
V
CC
=300V, R
C
=30Ω
V
BB
=-5V;t
p
=30μs
0.1
0.7
2.5
0.5
μs
μs
μs
μs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.83
UNIT
℃/W
2
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