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SMAJ33A

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size68KB,4 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
Download Datasheet Parametric View All

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SMAJ33A Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC

SMAJ33A Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Maximum breakdown voltage40.6 V
Minimum breakdown voltage36.7 V
Processing package descriptionHALOGEN FREE, SMAJ, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingNOT SPECIFIED
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipAVALANCHE
structureSINGLE
Diode component materialsSILICON
Maximum power consumption limit1 W
polarityUNIDIRECTIONAL
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
shutdown voltage33 V
Maximum non-repetitive peak speed power400 W
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