600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | EIC [EIC discrete Semiconductors] |
| package instruction | R-PDSO-C2 |
| Reach Compliance Code | _compli |
| ECCN code | EAR99 |
| Other features | EXCELLENT CLAMPING CAPABILITY, PRSM-MIN |
| Maximum breakdown voltage | 66.3 V |
| Minimum breakdown voltage | 60 V |
| Breakdown voltage nominal value | 64.5 V |
| Maximum clamping voltage | 87.1 V |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JEDEC-95 code | DO-214AA |
| JESD-30 code | R-PDSO-C2 |
| JESD-609 code | e3 |
| Maximum non-repetitive peak reverse power dissipation | 600 W |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -55 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| polarity | BIDIRECTIONAL |
| Maximum repetitive peak reverse voltage | 54 V |
| surface mount | YES |
| technology | AVALANCHE |
| Terminal surface | Tin (Sn) |
| Terminal form | C BEND |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
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