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SMBJ58

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size140KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

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SMBJ58 Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

SMBJ58 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Maximum breakdown voltage78.7 V
Minimum breakdown voltage64.4 V
Processing package descriptionPLASTIC PACKAGE-2
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipAVALANCHE
structuresingle
Diode component materialssilicon
Maximum power consumption limit1.38 W
polarityunidirectional
Diode typeTRANS voltage SUPPRESSOR diode
shutdown voltage58 V
Maximum non-repetitive peak speed power600 W

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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