|
VS-31DQ10TR-M3 |
VS-31DQ09-M3 |
VS-31DQ10-M3 |
VS-31DQ09TR-M3 |
Description |
VISHAY SEMICONDUCTOR - VS-31DQ09 - SCHOTTKY RECTIFIER; 3.3A; 90V; C-16 |
RECTIFIER DIODE |
RECTIFIER DIODE |
RECTIFIER DIODE |
package instruction |
O-PALF-W2 |
O-PALF-W2 |
O-PALF-W2 |
O-PALF-W2 |
Reach Compliance Code |
unknow |
unknow |
unknow |
unknow |
ECCN code |
EAR99 |
EAR99 |
EAR99 |
EAR99 |
Other features |
FREE WHEELING DIODE |
FREE WHEELING DIODE |
FREE WHEELING DIODE |
FREE WHEELING DIODE |
application |
GENERAL PURPOSE |
GENERAL PURPOSE |
GENERAL PURPOSE |
GENERAL PURPOSE |
Shell connection |
ISOLATED |
ISOLATED |
ISOLATED |
ISOLATED |
Configuration |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
Diode component materials |
SILICON |
SILICON |
SILICON |
SILICON |
Diode type |
RECTIFIER DIODE |
RECTIFIER DIODE |
RECTIFIER DIODE |
RECTIFIER DIODE |
Maximum forward voltage (VF) |
0.97 V |
0.97 V |
0.97 V |
0.97 V |
JEDEC-95 code |
DO-201AD |
DO-201AD |
DO-201AD |
DO-201AD |
JESD-30 code |
O-PALF-W2 |
O-PALF-W2 |
O-PALF-W2 |
O-PALF-W2 |
Maximum non-repetitive peak forward current |
210 A |
210 A |
210 A |
210 A |
Number of components |
1 |
1 |
1 |
1 |
Phase |
1 |
1 |
1 |
1 |
Number of terminals |
2 |
2 |
2 |
2 |
Maximum operating temperature |
150 °C |
150 °C |
150 °C |
150 °C |
Minimum operating temperature |
-40 °C |
-40 °C |
-40 °C |
-40 °C |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
ROUND |
ROUND |
ROUND |
ROUND |
Package form |
LONG FORM |
LONG FORM |
LONG FORM |
LONG FORM |
Maximum repetitive peak reverse voltage |
100 V |
90 V |
100 V |
90 V |
Maximum reverse current |
1000 µA |
1000 µA |
1000 µA |
1000 µA |
surface mount |
NO |
NO |
NO |
NO |
technology |
SCHOTTKY |
SCHOTTKY |
SCHOTTKY |
SCHOTTKY |
Terminal form |
WIRE |
WIRE |
WIRE |
WIRE |
Terminal location |
AXIAL |
AXIAL |
AXIAL |
AXIAL |