VS-11DQ09, VS-11DQ09-M3, VS-11DQ10, VS-11DQ10-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 1.1 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
Cathode
Anode
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
DO-204AL
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
DO-204AL (DO-41)
1.1 A
90 V, 100 V
See Electrical table
1.0 mA at 125 °C
150 °C
Single die
1.0 mJ
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-11DQ... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
1 Apk, T
J
= 25 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
1.1
90/100
85
0.85
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-11DQ09
90
VS-11DQ09-M3
90
VS-11DQ10
100
VS-11DQ10-M3
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 75 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 0.5 A, L = 8 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
1.1
85
14
1.0
0.5
mJ
A
A
UNITS
Revision: 21-Sep-11
Document Number: 93207
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-11DQ09, VS-11DQ09-M3, VS-11DQ10, VS-11DQ10-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
1A
Maximum forward voltage drop
See fig. 1
V
FM (1)
2A
1A
2A
Maximum reverse leakage current
See fig. 2
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.85
0.96
0.68
0.78
0.5
1.0
35
8.0
10 000
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
junction to lead
Approximate weight
SYMBOL
T
J (1)
, T
Stg
R
thJA
R
thJL
DC operation
Without cooling fin
DC operation
See fig. 4
TEST CONDITIONS
VALUES
- 40 to 150
100
°C/W
81
0.33
0.012
Case style DO-204AL (DO-41)
11DQ09
11DQ10
g
oz.
UNITS
°C
Marking device
Note
(1)
dP
tot
1
------------ < -------------
thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Revision: 21-Sep-11
Document Number: 93207
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-11DQ09, VS-11DQ09-M3, VS-11DQ10, VS-11DQ10-M3
www.vishay.com
Vishay Semiconductors
150
I
F
- Instantaneous Forward Current (A)
10
Allowable Case Temperature (°C)
120
DC
90
1
T = 150 °C
T = 125 °C
T = 25 °C
60
Square
wave (D = 0.50)
80 % Rated V
R
applied
30
see
note (1)
0
0
0.3
0.6
0.9
1.2
1.5
0.1
0
0.4
0.8
1.2
1.6
93207_01
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
93207_04
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Maximum Ambient Temperature vs.
Average Forward Current
10
0.8
I
R
- Reverse Current (mA)
1
0.1
T
J
= 150 °C
Average Power Loss (W)
0.6
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS Limit
DC
T
J
= 125 °C
0.01
0.001
0.0001
0
0
20
40
60
80
100
T
J
= 25 °C
0.4
0.2
0
0
93207_05
0.3
0.6
0.9
1.2
1.5
93207_02
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Forward Power Loss Characteristics
100
T
C
T
- Junction Capacitance (pF)
I
FSM
- Non-Repetitive Surge Current (A)
100
T
J
= 25 °C
At Any Rated Load Condition
And With rated V
RRM
Applied
Following
Surge
10
10
100
1000
10 000
10
0
93207_03
20
40
60
80
100
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
93207_06
t
p
- Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Document Number: 93207
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Revision: 21-Sep-11
VS-11DQ09, VS-11DQ09-M3, VS-11DQ10, VS-11DQ10-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
-
-
-
-
-
-
11
2
D
3
Q
4
10
5
TR
6
-M3
7
Vishay Semiconductors product
11 = 1.1 A (axial and small packages - current is x 10)
D = DO-41 package
Q = Schottky Q.. series
10 = Voltage ratings
TR = Tape and reel package
None = Bulk package
09 = 90 V
10 = 100 V
7
-
Environmental digit
None = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-11DQ09
VS-11DQ09TR
VS-11DQ09-M3
VS-11DQ09TR-M3
VS-11DQ10
VS-11DQ10TR
VS-11DQ10-M3
VS-11DQ10TR-M3
QUANTITY PER T/R
1000
5000
1000
5000
1000
5000
1000
5000
MINIMUM ORDER QUANTITY
1000
5000
1000
5000
1000
5000
1000
5000
PACKAGING DESCRIPTION
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95241
www.vishay.com/doc?95304
www.vishay.com/doc?95338
Revision: 21-Sep-11
Document Number: 93207
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Axial DO-204AL (DO-41)
DIMENSIONS
in millimeters (inches)
2.70 (0.106)
DIA.
2.29 (0.090)
Cathode band
27.0 (1.06) MIN.
(2 places)
27.0 (1.06) MIN.
(2 places)
5.21 (0.205)
MAX.
5.21 (0.205)
MAX.
1.27 (0.050) MAX.
Flash (2 places)
0.86 (0.034)
DIA.
0.72 (0.028)
(2 places)
0.86 (0.034)
DIA.
0.72 (0.028)
(2 places)
2.70 (0.106)
DIA.
2.29 (0.090)
Revision: 29-Aug-11
Document Number: 95241
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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