2N5551 C datasheet, PDF - EEWORLD Datasheet

2N5551 C: File Size251KB，3 Pages; ManufacturerShenzhen Haolin Technology Co., Ltd.; Websitehttp://www.szhaolin.com; Shenzhen Haolin Electronics Co., Ltd. was established in 2002. At the beginning of its establishment, the company was an agent distribution model. It is also the largest agent distributor of the Changdian brand. It specializes in Schottky, fast recovery diodes, MOSFET, 1300 high-voltage switching transistors, integrated circuits, with excellent quality, excellent unit price, excellent service, and excellent speed, and has won the best performance in agent distribution in South China.

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2N5551 C Parametric

Parameter Name	Attribute value
Transistor type	NPN
Collector-emitter breakdown voltage (Vceo)	160V
Collector current (Ic)	600mA
Power(Pd)	625mW
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib)	500mV@50mA,5mA
DC current gain (hFE@Ic,Vce)	150@10mA,5V
Characteristic frequency (fT)	80MHz
Operating temperature	-55℃~+150℃@(Tj)

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