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M5M5V1004BP-30

Description
Standard SRAM, 256KX4, 30ns, CMOS, PDIP28, 0.400 INCH, PLASTIC, DIP-28
Categorystorage    storage   
File Size350KB,6 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

M5M5V1004BP-30 Overview

Standard SRAM, 256KX4, 30ns, CMOS, PDIP28, 0.400 INCH, PLASTIC, DIP-28

M5M5V1004BP-30 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1403276023
Parts packaging codeDIP
package instructionDIP, DIP28,.4
Contacts28
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time30 ns
I/O typeCOMMON
JESD-30 codeR-PDIP-T28
JESD-609 codee0
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width4
Number of functions1
Number of ports1
Number of terminals28
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX4
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.4
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
power supply3.3 V
Certification statusNot Qualified
Maximum standby current0.001 A
Minimum standby current3 V
Maximum slew rate0.08 mA
Maximum supply voltage (Vsup)3.63 V
Minimum supply voltage (Vsup)2.97 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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