S0308FS31 datasheet, PDF - EEWORLD Datasheet

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S0308FS31: DescriptionSilicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 30V V(DRM), 1 Element, TO-202AB; CategoryAnalog mixed-signal IC Trigger device; File Size1MB，10 Pages; ManufacturerLoras Industries Inc.

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S0308FS31 Overview

Silicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 30V V(DRM), 1 Element, TO-202AB

S0308FS31 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	1409993293
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ANODE
Nominal circuit commutation break time	45 µs
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	20 V/us
Maximum DC gate trigger current	0.5 mA
Maximum DC gate trigger voltage	0.8 V
Maximum holding current	8 mA
JEDEC-95 code	TO-202AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Maximum leakage current	0.1 mA
On-state non-repetitive peak current	100 A
Number of components	1
Number of terminals	3
Maximum on-state current	8000 A
Maximum operating temperature	110 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	8 A
Maximum repetitive peak off-state leakage current	5 µA
Off-state repetitive peak voltage	30 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

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Description	Silicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 30V V(DRM), 1 Element, TO-202AB	Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 50V V(DRM), 1 Element, TO-202AB	Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 400V V(DRM), 1 Element, TO-220AB	Silicon Controlled Rectifier, 10A I(T)RMS, 10000mA I(T), 30V V(DRM), 1 Element, TO-202AB	Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 50V V(DRM), 1 Element, TO-202AB	Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 25V V(DRM), 1 Element, TO-220AB	Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 200V V(DRM), 1 Element, TO-202AB	Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 200V V(DRM), 1 Element, TO-202AB	Silicon Controlled Rectifier, 4A I(T)RMS, 2400mA I(T), 100V V(DRM), 1 Element, TO-202AB
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Objectid	1409993293	1409993158	1409993512	1409993291	1409993274	1409993522	1409993156	1409993209	1409993255
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ANODE	ANODE	ANODE	ANODE	ANODE	ANODE	ANODE	ANODE	ANODE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum DC gate trigger current	0.5 mA	0.05 mA	30 mA	0.5 mA	0.5 mA	30 mA	0.05 mA	0.2 mA	0.5 mA
Maximum DC gate trigger voltage	0.8 V	0.8 V	1.5 V	0.8 V	0.8 V	1.5 V	0.8 V	0.8 V	0.8 V
Maximum holding current	8 mA	6 mA	40 mA	8 mA	6 mA	50 mA	6 mA	6 mA	6 mA
JEDEC-95 code	TO-202AB	TO-202AB	TO-220AB	TO-202AB	TO-202AB	TO-220AB	TO-202AB	TO-202AB	TO-202AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3
Maximum on-state current	8000 A	4000 A	25000 A	10000 A	4000 A	25000 A	4000 A	4000 A	2400 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	8 A	4 A	25 A	10 A	4 A	25 A	4 A	4 A	4 A
Maximum repetitive peak off-state leakage current	5 µA	2 µA	10 µA	5 µA	2 µA	10 µA	2 µA	2 µA	10 µA
Off-state repetitive peak voltage	30 V	50 V	400 V	30 V	50 V	25 V	200 V	200 V	100 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR
Nominal circuit commutation break time	45 µs	60 µs	-	45 µs	45 µs	-	60 µs	50 µs	30 µs
Critical rise rate of minimum off-state voltage	20 V/us	15 V/us	-	20 V/us	20 V/us	-	4 V/us	50 V/us	-
Maximum leakage current	0.1 mA	0.1 mA	-	0.1 mA	0.1 mA	-	0.1 mA	0.1 mA	0.01 mA
On-state non-repetitive peak current	100 A	30 A	-	100 A	30 A	-	30 A	30 A	15 A
Maximum operating temperature	110 °C	85 °C	-	110 °C	85 °C	-	85 °C	85 °C	100 °C
Minimum operating temperature	-40 °C	-40 °C	-	-40 °C	-40 °C	-	-40 °C	-40 °C	-40 °C

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