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SR1100

Description
1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size101KB,3 Pages
ManufacturerHY Electronic
Websitehttp://www.hygroup.com.tw
Download Datasheet Parametric Compare View All

SR1100 Overview

1 A, 100 V, SILICON, SIGNAL DIODE, DO-41

SR1100 Parametric

Parameter NameAttribute value
MakerHY Electronic
package instructionO-PALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage100 V
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
SR120 thru SR1100
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
- 20
to
100Volts
FORWARD CURRENT
- 1.0
Ampere
DO- 41
FEATURES
Metal-Semiconductor junction with gard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low vlotage, high frequency inverters,
1.0(25.4)
MIN.
.034(0.9)
DIA
.028(0.7)
free wheeling, and polarity protection applications
.205(5.2)
MAX
.107(2.7)
DIA
.080(2.0)
1.0(25.4)
MIN.
MECHANICAL DATA
Case: JEDEC DO-41 molded plastic
Polarity: Color band denotes cathode
Weight: 0.012 ounces , 0.34 grams
Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375″(9.5mm) Lead Lengths
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Bolcking Voltage
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
@T
J
=25℃
@T
J
=100℃
@T
L
=100
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
SR120
20
14
20
SR130
30
21
30
SR140
40
28
40
SR150
50
35
50
1.0
SR160
60
42
60
SR180
80
56
80
SR1100
100
70
100
UNIT
V
V
V
A
I
FSM
V
F
I
R
C
J
R
θJL
T
J
T
STG
110
0.55
40
0.70
1.0
10
80
15
-55 to +125
-55 to +150
0.85
A
V
mA
pF
℃/W
NOTES: 1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2.Thermal resistance junction to lead.
~ 200 ~

SR1100 Related Products

SR1100 SR160 SR180
Description 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41
Maker HY Electronic HY Electronic HY Electronic
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Other features FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-41 DO-41 DO-41
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2
Number of components 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 100 V 60 V 80 V
surface mount NO NO NO
technology SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL

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