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P4SMA120A

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size248KB,3 Pages
ManufacturerPacelader Industrial
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P4SMA120A Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC

P4SMA Series
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage: 6.8 to 600 V Peak Pulse Power: 400 W
SMA/DO-214AC
.055(1.40)
.062(1.60)
.098(2.50)
.114(2.90)
.157(4.00)
.181(4.60)
.006(.152)
.012(.305)
.078(2.00)
.096(2.44)
.030(0.76)
.060(1.52)
.004(.102)
.008(.203)
.188(4.80)
.208(5.28)
Dimensions in inches and (millimeters)
FEATURES
MECHANICAL DATA
Glass passivated chip
400 W peak pulse power capability with a
10/1000
μs
waveform, repetitive rate (duty
cycle):0.01 %
Low leakage
Uni and Bidirectional unit
Excellent clamping capability
Very fast response time
RoHS compliant
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Solderable per MIL-STD-750, method
2026
Polarity: Color band denotes cathode end
except Bipolar
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
C
ambient temperature unless otherwise specified
o
Parameter
Peak power dissipation with a 10/1000μs waveform
(1)
(1)
Peak pulse current wih a 10/1000μs waveform
Power dissipation on infinite heatsink at T
L
= 75 °C
Peak forward surge current, 8.3 ms single half sine-
(2)
wave unidirectional only
Maximum instantaneous forward voltage at 25 A for
unidirectional only
(3)
Operating junction and storage temperature range
Note:
(1)Non-repetitive current pulse per Fig.5 and derated above T
A
= 25 °C per Fig.1
Value
Symbol
P
PP
400
I
PP
See Next Table
P
D
1.0
I
FSM
V
F
T
J
, T
STG
40
3.5/5.0
–55 to +150
UNIT
W
A
W
A
V
°C
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3)V
F
<3.5V for devices of V
BR
<200V and V
F
<5.0V for devices of V
BR
>201V
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