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JANTX1N4100UR-1

Description
Zener Diode, 7.5V V(Z), 5%, 0.4W,
CategoryDiscrete semiconductor    diode   
File Size428KB,26 Pages
ManufacturerAeroflex Metelics / Hi-Rel Components
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Zener Diode, 7.5V V(Z), 5%, 0.4W,

JANTX1N4100UR-1 Parametric

Parameter NameAttribute value
Objectid110095688
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance200 Ω
Number of components1
Maximum operating temperature200 °C
Maximum power dissipation0.4 W
Nominal reference voltage7.5 V
surface mountYES
Maximum voltage tolerance5%
Working test current0.25 mA
The documentation and process conversion measures
necessary to comply with this document shall be
completed by 6 October 2012.
INCH-POUND
MIL-PRF-19500/435L
6 July 2012
SUPERSEDING
MIL-PRF-19500/435K
8 April 2011
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES
1N4099-1 THROUGH 1N4135-1, 1N4614-1 THROUGH 1N4627-1, 1N4099UR-1 THROUGH 1N4135UR-1,
1N4614UR-1 THROUGH 1N4627UR-1, PLUS C AND D TOLERANCE SUFFIX DEVICES,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein
shall consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage
regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are
provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for
each unencapsulated device type (die). For JANHC and JANKC quality levels see
6.5.
1.2 Physical dimensions. See
figure 1
(DO-35),
figure 2
(DO-213AA), and
figure 3
(JANHC and JANKC).
1.3 Maximum ratings Unless otherwise specified T
C
= 25°C. Maximum ratings are as shown in maximum test
ratings herein (see
3.8),
and as follows:
a. PTL = 500 mW (DO-35) at TL = 50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at
L = .375 inch (9.53 mm). (Derate IZ to 0 dc at +175°C).
b. PTEC = 500 mW (DO-213AA) at TEC = 125°C. (Derate to 0 at 175°C).
-65°C
TJ
+175°C; -65°C
TSTG
+175°C.
c. PTPCB = 400 mW, TA = +55°C. (Derate to 0 at +175°C).
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN:
VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil
. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST Online
database at
https://assist.dla.mil
.
AMSC N/A
FSC 5961

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