R0577YS12E datasheet, PDF - EEWORLD Datasheet

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R0577YS12E: DescriptionSilicon Controlled Rectifier, 1169A I(T)RMS, 712000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, 101A335, 3 PIN; CategoryAnalog mixed-signal IC Trigger device; File Size235KB，12 Pages; ManufacturerLittelfuse; Websitehttp://www.littelfuse.com; Environmental Compliance

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R0577YS12E Overview

Silicon Controlled Rectifier, 1169A I(T)RMS, 712000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, 101A335, 3 PIN

R0577YS12E Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	4004438228
package instruction	101A335, 3 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Nominal circuit commutation break time	25 µs
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	200 V/us
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	1000 mA
JESD-30 code	O-CXDB-X3
Maximum leakage current	60 mA
On-state non-repetitive peak current	6000 A
Number of components	1
Number of terminals	3
Maximum on-state current	712000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	1169 A
Off-state repetitive peak voltage	1200 V
Repeated peak reverse voltage	1200 V
surface mount	YES
Terminal form	UNSPECIFIED
Terminal location	UNSPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

R0577YS12E Related Products

	R0577YS12E	R0577YS10D	R0577YS10E	R0577YS12D
Description	Silicon Controlled Rectifier, 1169A I(T)RMS, 712000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, 101A335, 3 PIN	Silicon Controlled Rectifier, 1169A I(T)RMS, 712000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, 101A335, 3 PIN	Silicon Controlled Rectifier, 1169A I(T)RMS, 712000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, 101A335, 3 PIN	Silicon Controlled Rectifier, 1169A I(T)RMS, 712000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, 101A335, 3 PIN
package instruction	101A335, 3 PIN	DISK BUTTON, O-CXDB-X3	DISK BUTTON, O-CXDB-X3	101A335, 3 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant
Nominal circuit commutation break time	25 µs	20 µs	25 µs	20 µs
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Critical rise rate of minimum off-state voltage	200 V/us	200 V/us	200 V/us	200 V/us
Maximum DC gate trigger current	200 mA	200 mA	200 mA	200 mA
Maximum DC gate trigger voltage	3 V	3 V	3 V	3 V
Maximum holding current	1000 mA	1000 mA	1000 mA	1000 mA
JESD-30 code	O-CXDB-X3	O-CXDB-X3	O-CXDB-X3	O-CXDB-X3
Maximum leakage current	60 mA	60 mA	60 mA	60 mA
On-state non-repetitive peak current	6000 A	6000 A	6000 A	6000 A
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum on-state current	712000 A	712000 A	712000 A	712000 A
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	1169 A	1169 A	1169 A	1169 A
Off-state repetitive peak voltage	1200 V	1000 V	1000 V	1200 V
Repeated peak reverse voltage	1200 V	1000 V	1000 V	1200 V
surface mount	YES	YES	YES	YES
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Trigger device type	SCR	SCR	SCR	SCR

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