ZMY3V9 to ZMY100
www.vishay.com
Vishay Semiconductors
Zener Diodes
FEATURES
• Silicon planar power Zener diodes
• For use in stablilizing and clipping circuits with
high power rating
• The Zener voltages are graded according to the
international E 24 standard. Smaller voltage
tolerances are available upon request
• These diodes are also available in the DO-41
case with the type designation ZPY3V9 to ZPY100
• AEC-Q101 qualified
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
3.9 to 100
5 to 100
Pulse current
Single
UNIT
V
mA
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
ORDERING INFORMATION
DEVICE NAME
ZMY3V9 to ZMY100
ZMY3V9 to ZMY100
ORDERING CODE
ZMY3V9 to ZMY100-series-GS18
ZMY3V9 to ZMY100-series-GS08
TAPED UNITS PER REEL
5 000 (12 mm tape on 13" reel)
1 500 (12 mm tape on 7" reel)
MINIMUM ORDER QUANTITY
10 000/box
12 000/box
PACKAGE
PACKAGE NAME
MELF DO-213AB (glass)
WEIGHT
135 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Zener current
Junction to ambient air
Junction to ambient case
Junction temperature, maximum
Storage temperature range
TEST CONDITION
Valid provided that electrodes are kept at
ambient temperature
See table “Characteristics”
Valid provided that electrodes are kept at
ambient temperature
R
thJA
R
thJC
T
j
T
stg
170
60
175
- 55 to + 175
K/W
K/W
°C
°C
SYMBOL
P
tot
VALUE
1000
UNIT
mW
Rev. 1.9, 06-Dec-11
Document Number: 85788
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ZMY3V9 to ZMY100
www.vishay.com
Vishay Semiconductors
DYNAMIC
RESISTANCE
f = 1 kHz
Z
Z
at I
ZT1
MAX.
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
-
-
-
0.7
1.5
2
3
5
6
7
7.5
8.5
9
10
11
12
14
15
17
18
20
22.5
25
27
29
32
35
38
42
47
51
56
61
68
75
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
7
7
7
5
2
2
2
2
2
4
4
7
7
9
9
10
11
12
13
14
15
20
20
60
60
80
80
100
100
130
130
160
160
250
250
TYP.
4
4
4
2
1
1
1
1
1
2
2
3
3
4
4
5
5
6
7
8
9
10
11
25
30
35
40
45
50
60
65
70
80
120
130
203
182
165
150
135
128
110
100
89
82
74
66
60
55
49
44
40
36
34
29
27
25
22
20
18
17
15
14
13
11
10
9
8
7.5
7
ADMISSIBLE
ZENER
CURRENT
(1)
I
Z
mA
MIN.
-7
-7
-7
-6
-3
-1
0
0
3
3
5
5
5
5
5
7
7
7
7
7
7
7
7
7
8
8
8
8
8
8
8
8
8
9
9
TEMPERATURE
COEFFICIENT OF
ZENER VOLTAGE
VZ
at I
ZT1
10
-4
/°C
MAX.
2
3
4
5
5
6
7
7
8
8
9
10
10
10
10
11
11
11
11
12
12
12
12
12
12
13
13
13
13
13
13
13
13
13
13
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
(2)
PART NUMBER
V
Z
at I
ZT1
V
MIN.
ZMY3V9
ZMY4V3
ZMY4V7
ZMY5V1
ZMY5V6
ZMY6V2
ZMY6V8
ZMY7V5
ZMY8V2
ZMY9V1
ZMY10
ZMY11
ZMY12
ZMY13
ZMY15
ZMY16
ZMY18
ZMY20
ZMY22
ZMY24
ZMY27
ZMY30
ZMY33
ZMY36
ZMY39
ZMY43
ZMY47
ZMY51
ZMY56
ZMY62
ZMY68
ZMY75
ZMY82
ZMY91
ZMY100
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
NOM. MAX.
3.9
4.1
4.3
4.6
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.8
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
88
96
106
TEST
CURRENT
I
ZT1
mA
V
REVERSE
VOLTAGE
V
R
at I
R
μA
Notes
(1)
Valid provided that electrodes are kept at ambient temperature
(2)
Tested with pulses t = 5 ms
p
Rev. 1.9, 06-Dec-11
Document Number: 85788
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ZMY3V9 to ZMY100
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Ω
10
3
5
4
3
2
Vishay Semiconductors
ZMY...
W
1.0
0.8
0.6
0.4
0.2
ZMY...
r
zj
10
2
ZMY5.1
5
4
3
2
P
tot
ZMY4.3
ZMY18
ZMY12
10
5
4
3
2
ZMY6.2
ZMY10
ZMY7.5
2
3 4 5
7
1
1
18312
2
0
0
19969
3 4 5 7
10
100 mA
100
T
amb
200 °C
I
Z
Fig. 1 -
Dynamic Resistance vs. Zener Current
Fig. 4 -
Admissible Power Dissipation vs. Ambient Temperature
Ω
100
7
5
4
3
2
ZMY...
°C/W
10
3
5
4
3
2
ZMY...
r
zj
r
thA
ZMY43
10
2
5
4
3
2
0.5
0.2
0.1
0.05
0.02
0.01
V
=0
-4
10
7
5
4
3
2
ZMY36
ZMY30
ZMY24
ZMY22
10
5
4
3
2
ZMY18
t
P
v
=
T
P
___
t
T
P
I
1
1
1
18313
2
3 4 5
10
2
3 4 5
100 mA
18286
10
-5
10
10
-3
10
-2
10
-1
t
P
1
10 s
I
Z
Fig. 2 -
Dynamic Resistance vs. Zener Current
Fig. 5 -
Pulse Thermal Resistance vs. Pulse Duration
Ω
10
3
7
5
4
3
2
ZMY...
mA
240
200
I
Z
ZMY100
ZMY82
ZMY68
ZMY56
ZMY43
160
120
100 mA
80
50 mA
Test Current l
Z
ZMY3.9 ZMY4.7
ZMY5.6
ZMY6.8
ZMY8.2
ZMY10
ZMY...
T
j
= 25 °C
r
zj
10
2
7
5
4
3
2
ZMY12
40
0
2
3 4 5
10
0.1
18314
1
2
3 4 5
10 mA
18309
0
1
2
3
4
5
6
7
8
9
V
Z
10 11 12 13 14 15
V
I
Z
Fig. 3 -
Dynamic Resistance vs. Zener Current
Fig. 6 -
Breakdown Characteristics
Rev. 1.9, 06-Dec-11
Document Number: 85788
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ZMY3V9 to ZMY100
www.vishay.com
Vishay Semiconductors
mA
20
ZMY56
mA
60
50
I
Z
40
30
20
10 mA
Test Current l
Z
25 mA
ZMY...
ZMY15
ZMY18
ZMY22
ZMY27
ZMY33
ZMY39
ZMY47
T
j
= 25 °C
ZMY...
Tj = 25 °C
I
Z
Test Current l
Z
10 mA
ZMY68
ZMY82
ZMY100
10
5 mA
10
0
0
18310
0
5
10
15
20
25
30
V
Z
35
40
45 50
V
18311
0
50
100
150
V
Z
200
V
Fig. 7 -
Breakdown Characteristics
Fig. 8 -
Breakdown Characteristics
PACKAGE DIMENSIONS
in millimeters (inches):
MELF DO-213AB (glass)
2.6 (0.102)
Cathode identification
2.4 (0.094)
0.55 (0.022)
5.2 (0.205)
4.8 (0.189)
The gap
between
plug and glass can
be
either on cathode or anode side
Foot print recommendation:
1.25 (0.049)
min.
4.00 (0.157)
max.
3.00 (0.118)
6.50 (0.256)
18317
ref.
Rev. 1.9, 06-Dec-11
Document Number: 85788
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
min.
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000