AP18T10AGK-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower Gate Charge
▼
Fast Switching Characteristic
▼
Halogen Free & RoHS Compliant Product
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
100V
160mΩ
2.8A
S
D
S
D
SOT-223
G
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SOT-223 package is designed for suface mount application,
larger heatsink than SO-8 and SOT package.
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current , V
GS
@ 10V
Rating
100
+20
2.8
2.2
10
2.8
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Continuous Drain Current , V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
45
Units
℃/W
Data and specifications subject to change without notice
1
201102232
AP18T10AGK-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=2A
V
GS
=5V, I
D
=1A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
o
Min.
100
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
3.2
-
-
6
1.5
3.5
5
6
16
6
400
55
35
Max. Units
-
160
290
3
-
25
+100
9.6
-
-
-
-
-
-
640
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=2A
V
DS
=80V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=2A
V
DS
=50V
V
GS
=4.5V
V
DS
=50V
I
D
=1A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=2.1A, V
GS
=0V
I
S
=2A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
35
55
Max. Units
1.3
-
-
V
ns
nC
Reverse Recovery Time
2
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 120
℃/W
when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP18T10AGK-HF
20
16
T
A
= 25 C
16
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
T
A
= 150
o
C
12
10V
8.0V
7.0V
6.0V
V
G
= 5.0V
12
8
8
V
G
= 4.0V
4
4
0
0
2
4
6
8
0
0
2
4
6
8
10
12
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
200
2.4
I
D
=1A
T
A
=25 C
180
2.0
o
I
D
=2A
V
G
=10V
R
DS(ON)
(m
Ω
)
160
Normalized R
DS(ON)
2
4
6
8
10
1.6
140
1.2
120
0.8
100
0.4
-50
0
50
100
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
10
Normalized V
GS(th)
(V)
1.4
8
1.2
I
S
(A)
6
T
j
=150
o
C
T
j
=25
o
C
0.8
4
0.4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP18T10AGK-HF
10
800
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
8
I
D
=2A
V
DS
= 50 V
600
C (pF)
6
400
C
iss
4
200
2
C
oss
C
rss
0
0
2
4
6
8
10
12
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
10
0.2
0.1
I
D
(A)
Operation in this area
limited by R
DS(ON)
100us
1ms
10ms
100ms
0.1
0.05
1
0.02
0.01
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 120℃/W
0.1
T
A
=25
o
C
Single Pulse
0.01
0.01
0.1
1
10
100
1s
DC
0.001
1000
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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