934063294118 datasheet, PDF - EEWORLD Datasheet

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934063294118: DescriptionPower Field-Effect Transistor, 100A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size337KB，14 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com; Environmental Compliance

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934063294118 Overview

Power Field-Effect Transistor, 100A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

934063294118 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	4002403268
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	292 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	40 V
Maximum drain current (ID)	100 A
Maximum drain-source on-resistance	0.0036 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	668 A
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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BUK763R6-40C

N-channel TrenchMOS standard level FET

Rev. 04 — 16 June 2010

Product data sheet

1. Product profile

1.1 General description

Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a

plastic package using advanced TrenchMOS technology. This product has been designed

and qualified to the appropriate AEC standard for use in high performance automotive

applications.

1.2 Features and benefits



AEC Q101 compliant



Avalanche robust



Suitable for standard level gate drive



Suitable for thermally demanding

environment up to 175°C rating

1.3 Applications



12V Motor, lamp and solenoid loads



High performance automotive power

systems



High performance Pulse Width

Modulation (PWM) applications

934063294118 Related Products

	934063294118	BUK763R6-40C
Description	Power Field-Effect Transistor, 100A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 100A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Is it Rohs certified?	conform to	conform to
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	292 mJ	292 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	40 V	40 V
Maximum drain current (ID)	100 A	100 A
Maximum drain-source on-resistance	0.0036 Ω	0.0036 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	668 A	668 A
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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