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123NQ080-100

Description
120 A, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size324KB,5 Pages
ManufacturerSMC
Websitehttp://www.smc-diodes.com/
Download Datasheet View All

123NQ080-100 Overview

120 A, SILICON, RECTIFIER DIODE

123NQ080/R-1
123NQ100/R-1
Technical Data
Data Sheet N1161, Rev. A
123NQ080/R-1 123NQ100/R-1SCHOTTKY RECTIFIER
Features
175℃ T
J
operation
Unique high power, Half-Pak module
Replaces three parallel DO-5’S
Easier to mount and lower profile than DO-5’S
High purity, high temperature epoxy encapsulation
for enhanced
mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
PRM1-1(HALF PAK Module)
Circuit Diagram
Applications
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
123NQ...-1
123NQ...R-1
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Forward Current
Peak One Cycle Non-Repetitive
Surge Current
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
E
AS
I
AR
Condition
-
50% duty cycle @T
C
=133°C,
rectangular wave form
8.3 ms, half Sine pulse
T
J
=25℃,I
AS
=1A,L=30mH
Current decaying linearly to zero in 1
μsec Frequency limited by T
J
max.
V
A
=1.5×V
R
typical
80
100
Max.
123NQ080(R)-1
123NQ100(R)-1
120
2520
15
1
Units
V
A
A
mJ
A
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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