T60N14VOC datasheet, PDF - EEWORLD Datasheet

T60N14VOC: DescriptionSilicon Controlled Rectifier, 60000mA I(T), 1400V V(DRM),; CategoryAnalog mixed-signal IC Trigger device; File Size808KB，10 Pages; ManufacturerEUPEC [eupec GmbH]

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T60N14VOC Overview

Silicon Controlled Rectifier, 60000mA I(T), 1400V V(DRM),

Parameter Name	Attribute value
Objectid	101749679
Reach Compliance Code	unknown
ECCN code	EAR99
Nominal circuit commutation break time	180 µs
Critical rise rate of minimum off-state voltage	400 V/us
Maximum DC gate trigger current	150 mA
Maximum DC gate trigger voltage	1.4 V
Maximum holding current	200 mA
Maximum leakage current	25 mA
On-state non-repetitive peak current	1400 A
Maximum on-state voltage	1.8 V
Maximum on-state current	60000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	1400 V
surface mount	NO
Trigger device type	SCR

	T60N14VOC	T60N16BOF	T60N18BOF
Description	Silicon Controlled Rectifier, 60000mA I(T), 1400V V(DRM),	Silicon Controlled Rectifier, 60000mA I(T), 1600V V(DRM),	Silicon Controlled Rectifier, 60000mA I(T), 1800V V(DRM),
Objectid	101749679	101749688	101749698
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Nominal circuit commutation break time	180 µs	180 µs	180 µs
Critical rise rate of minimum off-state voltage	400 V/us	1000 V/us	1000 V/us
Maximum DC gate trigger current	150 mA	150 mA	150 mA
Maximum DC gate trigger voltage	1.4 V	1.4 V	1.4 V
Maximum holding current	200 mA	200 mA	200 mA
Maximum leakage current	25 mA	25 mA	25 mA
On-state non-repetitive peak current	1400 A	1400 A	1400 A
Maximum on-state voltage	1.8 V	1.8 V	1.8 V
Maximum on-state current	60000 A	60000 A	60000 A
Maximum operating temperature	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C
Off-state repetitive peak voltage	1400 V	1600 V	1800 V
surface mount	NO	NO	NO
Trigger device type	SCR	SCR	SCR

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