S70V datasheet, PDF - EEWORLD Datasheet

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S70V: DescriptionSilicon Standard Recovery Diode; CategoryDiscrete semiconductor diode; File Size629KB，3 Pages; ManufacturerGeneSiC; Websitehttp://www.genesicsemi.com/; Environmental Compliance

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S70V Overview

Silicon Standard Recovery Diode

S70V Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	GeneSiC
package instruction	O-MUPM-D1
Reach Compliance Code	compli
ECCN code	EAR99
application	GENERAL PURPOSE
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JEDEC-95 code	DO-203AB
JESD-30 code	O-MUPM-D1
Maximum non-repetitive peak forward current	1250 A
Number of components	1
Phase	1
Number of terminals	1
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	70 A
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	1400 V
Maximum reverse current	10 µA
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED

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S70V thru S70YR

Silicon Standard

Recovery Diode

Features

• High Surge Capability

• Types from 1400 V to 1600 V V

RRM

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

2. Reverse polarity (R): Stud is anode.

3. Stud is base.

DO-5 Package

RRM

= 1400 V - 1600 V

= 70 A

Maximum ratings, at T

= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Parameter

Repetitive peak reverse voltage

RMS reverse voltage

DC blocking voltage

Continuous forward current

Surge non-repetitive forward

current, Half Sine Wave

Operating temperature

Storage temperature

Symbol

RRM

RMS

F,SM

stg

≤

110 °C

= 25 °C, t

= 8.3 ms

Conditions

S70V (R)

1400

990

1400

1250

-55 to 150

S70Y (R)

1600

1130

1600

1250

-55 to 150

Unit

°C

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Diode forward voltage

Reverse current

Symbol

Conditions

= 70 A, T

= 25 °C

= 100 V, T

= 25 °C

= 100 V, T

= 150 °C

S70V (R)

1.1

4.5

0.65

S70Y (R)

1.1

4.5

0.65

Unit

μA

°C/W

Thermal characteristics

Thermal resistance, junction -

case

thJC

www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

S70V Related Products

	S70V	S70VR
Description	Silicon Standard Recovery Diode	Silicon Standard Recovery Diode
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	GeneSiC	GeneSiC
package instruction	O-MUPM-D1	O-MUPM-D1
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
application	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	CATHODE	ANODE
Configuration	SINGLE	SINGLE
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V
JEDEC-95 code	DO-203AB	DO-203AB
JESD-30 code	O-MUPM-D1	O-MUPM-D1
Maximum non-repetitive peak forward current	1250 A	1250 A
Number of components	1	1
Phase	1	1
Number of terminals	1	1
Maximum operating temperature	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C
Maximum output current	70 A	70 A
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	POST/STUD MOUNT	POST/STUD MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Maximum repetitive peak reverse voltage	1400 V	1400 V
Maximum reverse current	10 µA	10 µA
surface mount	NO	NO
Terminal form	SOLDER LUG	SOLDER LUG
Terminal location	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED

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