FR105SGB0 datasheet, PDF - EEWORLD Datasheet

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FR105SGB0: DescriptionSIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size394KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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FR105SGB0 Overview

SIGNAL DIODE

FR105SGB0 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	1329828994
package instruction	O-PALF-W2
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY, LOW POWER LOSS
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-PALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	600 V
Maximum reverse recovery time	0.25 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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FR101SG thru FR107SG

Taiwan Semiconductor

CREAT BY ART

FEATURES

- High efficiency, low VF

- High current capability

- High reliability

- High surge current capability

- Low power loss

φ0.6mm

leads

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

Glass Passivated Fast Recovery Rectifiers

MECHANICAL DATA

Case:

A-405

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - green compound (halogen-free)

Terminal:

Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Weight:

0.2g (approximately)

A-405

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

=25

C unless otherwise noted)

105

600

420

600

106

800

560

800

107

1000

700

1000

μA

250

- 55 to +150

101

102

100

103

200

140

200

400

280

400

1.3

100

150

SYMBOL

RRM

RMS

F(AV)

FSM

Trr

θJA

STG

104

UNIT

500

C/W

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

Maximum instantaneous forward voltage (Note 1)

@1A

Maximum reverse current @ rated VR

Maximum reverse recovery time (Note 2)

Typical junction capacitance (Note 3)

Typical thermal resistance

Operating junction temperature range

Storage temperature range

=25

=125

e co

PARAMETER

Version: F14

Note 1: Pulse test with PW=300μs, 1% duty cycle

Note 2: Reverse Recovery Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.

Document Number: DS_D1407032

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