SMD Type
NPN Transistors
2SD1367
Transistors
■
Features
●
Low frequency power amplifier
●
Complementary to 2SB1001
0.42 0.1
1.70
0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse (Note.1)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note.1:PW
≤
10 ms, Duty cycle
≤
20%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
stg
Rating
20
16
6
2
3
1
150
-55 to 150
A
W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
C
ob
f
T
Test Conditions
Ic= 100 uA， I
E
= 0
Ic= 1 mA，R
BE
=
∞
I
E
= 100 uA， I
C
= 0
V
CB
= 16 V , I
E
= 0
V
EB
= 5V , I
C
=0
I
C
=1 A, I
B
=100mA
I
C
=1 A, I
B
=100mA
V
CE
= 2V, I
C
= 0.1 A
V
CB
= 10V, I
E
= 0,f=1MHz
V
CE
= 2V, I
C
= 10 mA
100
20
100
0.15
0.9
Min
20
16
6
0.1
0.1
0.3
1.2
500
pF
MHz
uA
V
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
Marking
2SD1367-A
100-200
BA
2SD1367-B
160-320
BB
2SD1367-C
250-500
BC
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SMD Type
NPN Transistors
2SD1367
■
Typical Characterisitics
1.2
Maximum Collector Dissipation Curve
100
Collector Current I
C
(mA)
80
60
40
20
I
B
0
50
100
150
。
Ambient Temperature Ta ( C)
Typical Output Characteristics
1,000
Collector Current I
C
(mA)
300
100
30
10
3
1
0
0
Transistors
Typical Output Characteristics
0.2
0.25
0.2
0.15
0.1
0.05 mA
=0
Collector Power Dissipation P
C
(W)
(on the alumina ceramic board)
0.8
0.4
2
4
6
8
10
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
2.0
1.6
1.2
0.8
0.4
20
15
10
Collector Current I
C
(A)
V
CE
= 2 V
5 mA
。
Ta = 75 C
25
–25
I
B
0
=0
0.4
0.8
1.2
1.6
2.0
Collector to Emitter Voltage V
CE
(V)
DC Current Transfer Ratio vs.
Collector Current
Collector to Emitter Saturation Voltage
V
CE (sat)
(V)
Base to Emitter Saturation Voltage
V
BE (sat)
(V)
0.2
0.4
0.6
0.8
Base to Emitter Voltage V
BE
(V)
1.0
10,000
DC Current Transfer Ratio h
FE
30,00
1,000
300
100
30
10
3.0
1.0
0.3
0.1
0.03
0.01
0.003
Saturation Voltage vs. Collector Current
Pusle
V
CE
= 2 V
V
BE (sat)
Ta = 75
。
C
25
l
C
= 10 l
B
–25
V
CE (sat)
1
3
10
30
100 300
Collector Current I
C
(mA)
1,000
3
10
30
100 300 1,000 3,000
Collector Current I
C
(mA)
2
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SMD Type
NPN Transistors
2SD1367
■
Typical Characterisitics
1,000
Collector Output Capacitance vs.
Collector to Base Voltage
Transistors
Collector Output Capacitance C
ob
(pF)
300
f = 1 MHz
I
E
= 0
100
30
10
0.1
0.3
1.0
3
10
Collector to Base Voltage V
CB
(V)
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