MV1630CHIP datasheet, PDF - EEWORLD Datasheet

MV1630CHIP: DescriptionVariable Capacitance Diode, Very High Frequency to Ultra High Frequency, 18pF C(T), 20V, Silicon, Abrupt; CategoryDiscrete semiconductor diode; File Size116KB，2 Pages; ManufacturerMsi Electronics Inc

Download Datasheet Parametric View All

MV1630CHIP Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 18pF C(T), 20V, Silicon, Abrupt

Parameter Name	Attribute value
Objectid	1404845674
package instruction	X-XUUC-N
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	20 V
Configuration	SINGLE
Diode Capacitance Tolerance	10%
Minimum diode capacitance ratio	2
Nominal diode capacitance	18 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 code	X-XUUC-N
Number of components	1
Maximum operating temperature	175 °C
Package body material	UNSPECIFIED
Package shape	UNSPECIFIED
Package form	UNCASED CHIP
Certification status	Not Qualified
minimum quality factor	250
Maximum repetitive peak reverse voltage	20 V
Maximum reverse current	1e-7 µA
Reverse test voltage	15 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Varactor Diode Classification	ABRUPT

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components