MMBD4148 datasheet, PDF - EEWORLD Datasheet

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MMBD4148: Description0.15 A, 75 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size854KB，2 Pages; ManufacturerKEXIN; Websitehttp://www.kexin.com.cn/html/index.htm

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MMBD4148 Overview

0.15 A, 75 V, SILICON, SIGNAL DIODE

MMBD4148 Parametric

Parameter Name	Attribute value
Number of terminals	3
Number of components	1
Processing package description	PLASTIC PACKAGE-3
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	tin lead
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Diode component materials	silicon
Maximum power consumption limit	0.3500 W
Diode type	Signal diode
Maximum reverse recovery time	0.0040 us
Maximum repetitive peak reverse voltage	75 V
Maximum average forward current	0.1500 A

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SMD Type

Switching Diodes

MMBD4148/SE/CC/CA

(KMBD4148/SE/CC/CA)

SOT-23

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Diodes

Unit: mm

+0.1

2.4

-0.1

●

Fast Switching Speed

●

For General Purpose Switching Applications

●

High Conductance

4148

3

4148SE

3

4148CC

3

4148CA

3

+0.1

1.3

-0.1

■

Features

1

+0.1

0.95

-0.1

+0.1

1.9

-0.1

2

0.55

0.4

3

+0.05

0.1

-0.01

1

2

1

2

1

2

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Reverse Voltage

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current

Peak Forward Surge Current

Peak Forward Surge Current @ t=1μs

@ t=1s

Power Dissipation

Thermal Resistance Junction to Ambient

Junction Temperature

Storage Temperature range

Symbol

V

RM

V

RRM

V

RWM

V

R

V

RMS

I

O

I

FM

I

FSM

P

d

R

θJA

T

J

T

stg

53

150

300

2

1

350

357

150

-55 to 150

mA

A

mW

℃/W

℃

75

V

Rating

100

Unit

■

Electrical Characteristics Ta = 25℃

Parameter

Reverse breakdown voltage

Symbol

V

R

V

F1

Forward voltage

V

F2

V

F3

V

F4

Reverse voltage leakage current

Capacitance between terminals

Reverse recovery time

I

R1

I

R2

C

T

t

rr

I

F

= 1 mA

I

F

= 10 mA

I

F

= 50 mA

I

F

= 150 mA

V

R

= 75 V

V

R

= 20 V

V

R

= 0 V, f= 1 MHz

I

F

=I

R

=10mA,Irr=0.1xI

R

, R

L

=100Ω

Test Conditions

I

R

= 100 uA

Min

75

0.715

0.855

1

1.25

2.5

25

2

4

uA

nA

pF

ns

V

Typ

Max

Unit

■

Marking

NO

Marking

MMBD4148

A6*

MMBD4148SE

D4

MMBD4148CC

D5

MMBD4148CA

D6

+0.1

0.38

-0.1

0-0.1

+0.1

0.97

-0.1

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MMBD4148 Related Products

	MMBD4148	MMBD4148CA	MMBD4148CC	MMBD4148SE
Description	0.15 A, 75 V, SILICON, SIGNAL DIODE	0.2 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE	0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE	0.2 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE

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