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RQK2001HQDQA_15

Description
Silicon N Channel MOS FET Power Switching
File Size174KB,9 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet View All

RQK2001HQDQA_15 Overview

Silicon N Channel MOS FET Power Switching

Preliminary
Datasheet
RQK2001HQDQA
Silicon N Channel MOS FET
Power Switching
Features
High drain to source voltage and Low gate drive
V
DSS
: 200 V and V
GSS
:
±30
V
Low drive current
High speed switching
Small traditional package (MPAK)
R07DS0311EJ0300
Rev.3.00
Jan 10, 2014
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
1
2
2
G
1. Source
2. Gate
3. Drain
S
1
Note:
Marking is "HQ".
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Thermal resistance
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse) Note1
I
DR
Pch
Note2
Rth(ch-a)
Note2
Tch
Tstg
Ratings
200
±30
0.4
1.6
0.4
0.8
156
150
–55 to +150
Unit
V
V
A
A
A
W
°C
/ W
°C
°C
Notes: 1. PW
10
μs,
Duty cycle
1%
2. When using the glass epoxy board (FR-4 40
×
40
×
1 mm)
R07DS0311EJ0300 Rev.3.00
Jan 10, 2014
Page 1 of 8
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