KSM52N20 / KSMF52N20T
N-Channel MOSFET
200V, 52A, 0.049Ω
Features
• R
DS(on)
= 0.041Ω ( Typ.)@ V
GS
= 10V, I
D
= 26A
• Low gate charge ( Typ. 49nC)
• Low C
rss
( Typ. 66pF)
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
TO-220
TO-220F
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Kersemi proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
D
G
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
=
25
o
C)
25
o
C
- Derate above
-Continuous (T
C
= 25 C)
-Continuous (T
C
= 100 C)
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
357
2.86
-55 to +150
300
o
o
Parameter
KSM52N20
KSMF52N20T
200
±30
52*
33*
208*
2520
52
35.7
4.5
38.5
0.3
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
C
o
C
52
33
208
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
KSM52N20
0.35
0.5
62.5
KSMF52N20T
3.3
-
62.5
o
Units
C/W
2014-7-2
1
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KSM52N20 / KSMF52N20T
Package Marking and Ordering Information
T
C
= 25
o
C unless otherwise noted
Device Marking
KSM52N20
KSMF52N20T
Device
KSM52N20
KSMF52N20T
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I
D
= 250µA, V
GS
= 0V, T
J
= 25
o
C
I
D
= 250µA, Referenced to 25
o
C
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, T
C
= 125 C
V
GS
= ±30V, V
DS
= 0V
o
200
-
-
-
-
-
0.2
-
-
-
-
-
1
10
±100
V
V/
o
C
µA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10V, I
D
= 26A
V
DS
= 40V, I
D
= 26A
(Note 4)
3.0
-
-
-
0.041
35
5.0
0.049
-
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DS
= 160V, I
D
= 52A
V
GS
= 10V
(Note 4, 5)
V
DS
= 25V, V
GS
= 0V
f = 1MHz
-
-
-
-
-
-
2230
540
66
49
19
24
2900
700
100
63
-
-
pF
pF
pF
nC
nC
nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 100V, I
D
= 20A
R
G
= 25Ω
(Note 4, 5)
-
-
-
-
53
175
48
29
115
359
107
68
ns
ns
ns
ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
SD
= 52A
V
GS
= 0V, I
SD
= 52A
dI
F
/dt = 100A/µs
(Note 4)
-
-
-
-
-
-
-
-
162
1.3
52
204
1.5
-
-
A
A
V
ns
µC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.4mH, I
AS
= 52A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤
52A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse width
≤
300µs, Duty Cycle
≤
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2014-7-2
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KSM52N20 / KSMF52N20T
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
2
o
Figure 2. Transfer Characteristics
I
D
, Drain Current [A]
10
1
I
D
, Drain Current [A]
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
10
2
150
°
C
10
1
25
°
C
-55
°
C
* Notes :
1. V
DS
= 40V
2. 250
µ
s Pulse Test
10
0
* Notes :
1. 250
µ
s Pulse Test
2. T
C
= 25
°
C
10
-1
10
-1
10
0
10
1
10
0
2
4
6
8
10
12
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.12
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
R
DS(ON)
[
Ω
],
Drain-Source On-Resistance
0.08
V
GS
= 10V
0.06
I
DR
, Reverse Drain Current [A]
0.10
10
2
10
1
150
℃
25
℃
0.04
V
GS
= 20V
0.02
* Note : T
J
= 25
°
C
* Notes :
1. V
GS
= 0V
2. 250
µ
s Pulse Test
0.00
0
25
50
75
100
125
150
10
0.2
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
6000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 6. Gate Charge Characteristics
12
5000
V
GS
, Gate-Source Voltage [V]
10
V
DS
= 40V
V
DS
= 100V
V
DS
= 160V
Capacitances [pF]
4000
C
oss
C
iss
8
3000
6
2000
* Note ;
1. V
GS
= 0 V
4
1000
C
rss
2. f = 1 MHz
2
* Note : I
D
= 52A
0
-1
10
10
0
10
1
0
0
10
20
30
40
50
60
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
2014-7-2
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KSM52N20 / KSMF52N20T
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
0.9
* Notes :
1. V
GS
= 0 V
2. I
D
= 250
µ
A
0.5
* Notes :
1. V
GS
= 10 V
2. I
D
= 26 A
0.8
-100
-50
0
50
100
150
200
0.0
-100
-50
0
50
100
150
200
T
J
, Junction Tem
perature [
°
C
]
T
J
, Junction Tem
perature [
°
C]
Figure 9-1. Maximum Safe Operating Area
- FDP52N20
10
3
Figure 9-2. Maximum Safe Operating Area
- FDPF52N20T
10
3
10
µ
s
10
2
I
D
, Drain Current [A]
10
1
I
D
, Drain Current [A]
100
µ
s
1 ms
10 ms
100 ms
DC
Operation in This Area
is Limited by R
DS(on)
10
2
10
µ
s
100
µ
s
1 ms
10
1
10 ms
Operation in This Area
is Limited by R
DS(on)
100 ms
DC
10
0
10
0
10
-1
* Notes :
1. T
C
= 25
°
C
2. T
J
= 150
°
C
3. Single Pulse
10
-1
* Notes :
1. T
C
= 25
°
C
2. T
J
= 150
°
C
3. Single Pulse
0
10
-2
10
0
10
1
10
2
10
-2
10
10
1
10
2
V
DS
, Drain-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
60
50
I
D
, Drain Current [A]
40
30
20
10
0
25
50
75
100
125
150
T
C
, Case Temperature [
°
C]
2014-7-2
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KSM52N20 / KSMF52N20T
o
Typical Performance Characteristics
(Continued)
Figure 11-1. Transient Thermal Response Curve - FDP52N20
Z
θ
JC
(t), Thermal Response
D =0.5
10
-1
0.2
0.1
0.05
0.02
10
-2
P
DM
t
1
* N o tes :
t
2
0
0.01
single pulse
1 . Z
θ
JC
(t) = 0.3 5 C /W M ax.
2 . D uty F actor, D =t
1
/t
2
3 . T
JM
- T
C
= P
D M
* Z
θ
JC
(t)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u are W a ve P u lse D uration [se c]
Figure 11-2. Transient Thermal Response Curve - FDPF52N20T
D=0.5
Z
θ
JC
(t), Thermal Response
10
0
0.2
0.1
0.05
10
-1
P
DM
t
1
t
2
0
0.02
0.01
* N otes :
1. Z
θ
JC
(t) = 3.3 C /W M ax.
2. D uty Factor, D =t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
single pulse
10
-2
-5
-4
-3
-2
-1
0
1
10
10
10
10
10
10
10
t
1
, Square W ave Pulse Duration [sec]
2014-7-2
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