Preliminary
Datasheet
CRD5AS-12B
Reverse Conducting Thyristor
Medium Power Use
Features
I
T (AV)
: 5 A
V
DRM
: 600 V
I
GT
: 100
A
The Product guaranteed maximum junction
temperature 150C
Built-in reverse conducting diode
Planar Type
R07DS0503EJ0100
Rev.1.00
Jul 07, 2011
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name: MP-3A)
4
2, 4
3
12
3
1
1.
2.
3.
4.
Cathode
Anode
Gate
Anode
Applications
Switching mode power supply, Regulator for motorcycle
Maximum Ratings
Parameter
Symbol
Voltage class
12
600
Unit
V
Repetitive peak off-state voltage
Note1
V
DRM
Notes: 1. With gate to cathode resistance R
GK
=220
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2
t for fusing
Surge reverse-conducting current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Symbol
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
I
RCSM
P
GM
P
G(AV)
V
FGM
V
RGM
I
FGM
Tj
Tstg
—
Ratings
7.8
5
90
33
3
0.5
0.1
6
6
0.3
– 40 to +150
– 40 to +150
0.26
Unit
A
A
A
A
2
s
A
W
W
V
V
A
C
C
g
Conditions
Commercial frequency, sine half wave
180 conduction, Tc=113C
60Hz sine half wave, 1full cycle,
peak value, non-repetitive
Value corresponding to 1cycle of half
wave 60Hz, surge on-state current
sine half wave, pulse width 10ms
peak value, non-repetitive, R
GK
=0
Typical value
R07DS0503EJ0100 Rev.1.00
Jul 07, 2011
Page 1 of 5
CRD5AS-12B
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Symbol
I
DRM
V
TM
V
GT
V
GD
I
GT
I
H
R
th(j-c)
Min.
—
—
—
0.1
1
—
—
Typ.
—
—
—
—
—
3
—
Max.
2.0
1.8
0.8
—
100
—
3.0
Unit
mA
V
V
V
A
mA
C/W
Test conditions
Tj = 150C, V
DRM
applied
R
GK
=220Ω
Tj = 25C, I
TM
= 15 A
instantaneous value
Tj = 25C, V
D
= 6 V, I
T
= 0.1 A
Tj = 150C, V
D
= 1/2 V
DRM
R
GK
=220Ω
Tj = 25C, V
D
= 6 V, I
T
= 0.1 A
Tj = 25°C, V
D
= 12 V
R
GK
=220Ω
Junction to case
Note2
Notes: 2. The measurement point for case temperature is at anode tab.
R07DS0503EJ0100 Rev.1.00
Jul 07, 2011
Page 2 of 5
CRD5AS-12B
Preliminary
Performance Curves
Maximum On-State Characteristics
10
2
Tc = 25°C
100
Rated Surge On-State Current
Surge On-State Current (A)
On-State Current (A)
80
10
1
60
40
10
0
20
0
10
0
10
−1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
10
1
10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
×
100 (%)
Gate Characteristics
10
2
Gate Trigger Current vs.
Junction Temperature
10
3
V
D
= 6V
R
L
= 60Ω
Gate Voltage (V)
10
1
V
FGM
= 6V
P
GM
= 0.5W
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
10
2
P
G(AV)
= 0.1W
10
0
V
GT
= 0.8V
I
GT
= 100µA I
FGM
= 0.3A
(T
j
= 25°C)
10
1
10
−1
10
−2
10
−1
V
GD
= 0.1V
Typical Example
10
0
–40
0
40
80
120
160
10
0
10
1
10
2
Gate Current (mA)
Junction Temperature (°C)
Maximum Transient Thermal
Impedance Characteristics
(Junction to case, Junction to ambient)
Gate Trigger Voltage vs.
Junction Temperature
Transient Thermal Impedance (°C/W)
1.0
10
3
10
0
10
1
10
2
10
3
Gate Trigger Voltage (V)
0.8
Typical Distribution
10
2
Junction to ambient
0.6
0.4
Typical Example
10
1
0.2
V
D
= 6V
R
L
= 60Ω
0
–40
0
40
80
120
160
10
0
−3
10
Junction to case
10
−2
10
−1
10
0
Junction Temperature (°C)
Time (s)
R07DS0503EJ0100 Rev.1.00
Jul 07, 2011
Page 3 of 5
CRD5AS-12B
Preliminary
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
160
Maximum Average Power Dissipation
(Single-Phase Full Wave)
16
Average Power Dissipation (W)
14
12
180°
90°
θ
= 30° 60°
120°
Case Temperature (°C)
θ
θ
140
120
100
80
60
40
θ
θ
360°
θ
= 30°
60° 90° 120° 180°
360°
10 Resistive
loads
8
6
4
2
0
0
1
2
3
4
5
6
7
8
20 Resistive
loads
0
0
1
2
3
4
5
6
7
8
Average On-State Current (A)
Average On-State Current (A)
×
100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
140
120
100
80
60
40
20
0
0
10
10
1
10
2
10
3
Breakover Voltage vs.
Junction Temperature
×
100 (%)
Typical Example
Tj = 125°C
R
GK
= 220Ω
160
140
120
100
80
60
40
20
Typical Example
R
GK
= 220Ω
Breakover Voltage (dv/dt = xV/μs)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
0
–40
0
40
80
120
160
Rate of Rise of Off-State Voltage (V/μs)
Junction Temperature (°C)
R07DS0503EJ0100 Rev.1.00
Jul 07, 2011
Page 4 of 5
CRD5AS-12B
Preliminary
Package dimensions
Package Name
MP-3A
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZG-A
Previous Code
TMP3
MASS[Typ.]
0.32g
Unit: mm
1 ± 0.2
6.6
5.3 ± 0.2
2.3
0.5 ± 0.2
6.1 ± 0.2
10.4Max
0.1 ± 0.1
1Max
2.5Min
0.76 ± 0.2
0.76
0.5 ± 0.2
2.3 ± 0.2
2.3
Ordering Information
Orderable Part Number
CRD5AS-12B#B00
CRD5AS-12B-T13#B00
Packing
Tube
Embossed Tape
Quantity
75 pcs.
3000 pcs.
Remark
—
Taping direction “T1”
Note : Please confirm the specification about the shipping in detail.
R07DS0503EJ0100 Rev.1.00
Jul 07, 2011
1
1.4 ± 0.2
Page 5 of 5
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