LESHAN RADIO COMPANY, LTD.
Switching Diode
FEATURE
Small plastic SMD package.
Continuous reverse voltage: max. 75 V.
High-speed switching in hybrid thick and thin-film circuits.
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
1
LBAS16HT1G
S-LBAS16HT1G
DEVICE MARKING AND ORDERING INFORMATION
Device
LBAS16HT1G
S-LBAS16HT1G
LBAS16HT3G
S-LBAS16HT3G
Marking
A6
Shipping
3000/Tape&Reel
10000/Tape&Reel
2
SOD -323
A6
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
75
200
500
Unit
Vdc
mAdc
mAdc
1
CATHODE
2
ANODE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,*
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
**FR-4 Minimum Pad
Symbol
P
D
Max
200
1.57
Unit
mW
mW/°C
°C/W
°C
R
θJA
T
J
, T
stg
635
-55to+150
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 75 Vdc)
(V
R
= 75 Vdc, T
J
= 150°C)
(V
R
= 25 Vdc, T
J
= 150°C)
Reverse Breakdown Voltage
(I
BR
= 100
µAdc)
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Recovery Voltage
(I
F
= 10 mAdc, t
r
= 20 ns)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, R
L
= 50
Ω)
Stored Charge
(I
F
= 10 mAdc to V
R
= 5.0 Vdc, R
L
= 500
Ω)
Q
S
—
45
pC
C
D
V
FR
t
rr
V
(BR)
V
F
—
—
—
—
—
—
—
715
855
1000
1250
2.0
1.75
4.0
pF
Vdc
ns
I
R
—
—
—
75
1.0
50
30
—
Vdc
µAdc
Symbol
Min
Max
Unit
mV
Rev.A 1/3
LESHAN RADIO COMPANY, LTD.
LBAS16HT1G,S-LBAS16HT1G
+10 V
820
Ω
2.0 k
0.1µF
t
r
t
p
10%
t
I
F
t
rr
t
100
µH
I
F
0.1
µF
50
Ω
OUTPUT
PULSE
GENERATOR
DUT
50
Ω
INPUT
SAMPLING
OSCILLOSCOPE
90%
i
R(REC)
= 1.0 mA
INPUT SIGNAL
V
R
I
R
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I
F
) of 10mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
TYPICAL CHARACTERISTICS
100
10
T
A
= 150˚C
I
F
, FORWARD CURRENT (mA)
T
A
= 85˚C
10
I
R
, REVERSE CURRENT (
µ
A)
T
A
= –40˚C
1.0
T
A
= 125˚C
T
A
= 85˚C
0.1
T
A
= 25˚C
1.0
T
A
= 55˚C
0.01
T
A
= 25˚C
0.001
0
10
20
30
40
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V
F
, FORWARD VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
C
D
, DIODE CAPACITANCE (pF)
0.64
0.60
0.56
0.52
0
2
4
6
8
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
Rev.A 2/3
LESHAN RADIO COMPANY, LTD.
LBAS16HT1G,S-LBAS16HT1G
SOD-323
H
E
D
b
1
2
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1
0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C
0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
H
E
2.30
2.50
2.70
MIN
0.031
0.000
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
A3
A
L
NOTE 5
C
NOTE 3
A1
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
Rev.A 3/3
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