LESHAN RADIO COMPANY, LTD.
30V N-Channel Enhancement-Mode MOSFET
V
DS
= 30V
R
DS(ON)
, V
gs
@10V, I
ds
@6 A =
38mΩ
R
DS(ON)
, V
gs
@4.5V, I
ds
@5A =
52mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
High Power and Current Handling Capability
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
1
2
LN4812LT1G
S-LN4812LT1G
3
SOT– 23 (TO–236AB)
▼
Simple Drive Requirement
▼
Small Package Outline
▼
Surface Mount Device
Ordering Information
1
N - Channel
3
Device
LN4812LT1G
S-LN4812LT1G
LN4812LT3G
S-LN4812LT3G
Marking
N48
N48
Shipping
3000/Tape&Reel
10000/Tape&Reel
2
Maximum Ratings and Thermal Characteristics
(T
A
= 25
o
C unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
θJC
R
θJA
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1)
Limit
30
Unit
V
± 20
6
A
30
TA = 25
o
C
TA = 75 C
o
1.4
W
0.8
-55 to 150
50
2)
o
o
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted)
C
90
C/W
Note:
1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2
2oz Cu PCB board
2. 1-in
3. Guaranteed by design; not subject to production testing
Rev .O 1/4
LESHAN RADIO COMPANY, LTD.
LN4812LT1G , S-LN4812LT1G
ELECTRICAL CHARACTERISTICS
Symbol
Static
BV
DSS
R
DS(on)
R
DS(on)
V
GS(th)
I
DSS
I
GSS
g
fs
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
V
GS
= 0V, I
D
= 250uA
V
GS
= 4.5V, I
D
= 5A
V
GS
= 10V, I
D
= 6A
V
DS
=V
GS
, I
D
= 250uA
V
DS
= 24V, V
GS
= 0V
V
GS
= ± 20V, V
DS
= 0V
V
DS
= 5V, I
D
= 6.9A
15.4
1
30
35.0
22.0
1.5
52.0
38.0
3
1
+ 100
V
mΩ
V
uA
nA
S
Parameter
Test Condition
Min
Typ
Max
Unit
Dynamic
3)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 15V, V
GS
= 0V
f = 1.0 MHz
V
DD
= 15V, R
L
= 15Ω
I
D
= 1A, V
GEN
= 10V
R
G
= 6Ω
V
DS
= 15V, I
D
= 8.5A
V
GS
= 10V
13
4.2
3.1
9
14
30
5
610
100
77
pF
ns
20
nC
Source-Drain Diode
I
S
V
SD
Max. Diode Forward Current
Diode Forward Voltage
I
S
= 1A, V
GS
= 0V
3
1.3
A
V
Note:
Pulse test: pulse width <= 300us, duty cycle<= 2%
Rev .O 2/4
LESHAN RADIO COMPANY, LTD.
LN4812LT1G , S-LN4812LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
Id, DRAIN CURRENT(A)
Id DRAIN CURRENT(A)
V gs , G A T E - T O - S O U R C E V O L T A G E ( V )
V d s , D R A I N - T O - S O U RC E V O L T A G E ( V )
Figure 1. Transfer Characteristics
Figure 2. On–Region Characteristics
R d s ( o n ) - On - R e s i s t a n c e ( Ω)
R d s ( o n )- O n - R e s i s t a n ce ( Ω)
0.5
0.4
0.3
0.2
0.1
0
3
3.2
3.4
3.6
3.8
V g s - G a t e - t o - S o ur c e V o l t a g e ( V )
4
Id=5A
I d - D r a i n C u rr e n t ( A )
Figure 3. On–Resistance versus Drain Current
Figure 4. On-Resistance vs. Gate-to-Source Voltage
Rev .O 3/4
LESHAN RADIO COMPANY, LTD.
LN4812LT1G , S-LN4812LT1G
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
J
K
K
J
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
C
D
H
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev .O 4/4
京公网安备 11010802033920号
EEWORLD
