BAV70Q-13-F datasheet, PDF - EEWORLD Datasheet

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BAV70Q-13-F: Description0.15 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size163KB，4 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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BAV70Q-13-F Overview

0.15 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAV70Q-13-F Parametric

Parameter Name	Attribute value
Number of components	2
Number of terminals	3
Processing package description	GREEN, PLASTIC PACKAGE-3
each_compli	Yes
EU RoHS regulations	Yes
state	Active
Diode type	RECTIFIER DIODE
structure	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Maximum forward voltage	0.7150 V
jesd_30_code	R-PDSO-G3
jesd_609_code	e3
moisture_sensitivity_level	1
Maximum non-repetitive peak forward current	1 A
Minimum operating temperature	-65 Cel
Maximum operating temperature	150 Cel
Maximum output current	0.1500 A
Packaging Materials	PLASTIC/EPOXY
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
eak_reflow_temperature__cel_	260
wer_dissipation_max	0.3500 W
eference_standard	AEC-Q101
Maximum repetitive peak reverse voltage	75 V
Maximum reverse recovery time	0.0040 µs
sub_category	Rectifier Diodes
surface mount	YES
terminal coating	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
ime_peak_reflow_temperature_max__s_	40
dditional_feature	HIGH RELIABILITY

BAV70Q-13-F Related Products

	BAV70Q-13-F	BAV70-13-F	BAV70Q-7-F	BAV70_15
Description	0.15 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE	0.15 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE	0.15 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE	0.15 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Number of components	2	2	2	2
Number of terminals	3	3	3	3
Processing package description	GREEN, PLASTIC PACKAGE-3	GREEN, PLASTIC PACKAGE-3	GREEN, PLASTIC PACKAGE-3	GREEN, PLASTIC PACKAGE-3
EU RoHS regulations	Yes	Yes	Yes	Yes
state	Active	Active	ACTIVE	Active
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	Signal diode	RECTIFIER DIODE
structure	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON	SILICON	silicon	SILICON
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	Plastic/Epoxy	PLASTIC/EPOXY
packaging shape	RECTANGULAR	RECTANGULAR	Rectangle	RECTANGULAR
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum repetitive peak reverse voltage	75 V	75 V	75 V	75 V
Maximum reverse recovery time	0.0040 µs	0.0040 µs	0.0040 us	0.0040 µs
surface mount	YES	YES	Yes	YES
terminal coating	MATTE TIN	MATTE TIN	MATTE Tin	MATTE TIN
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	pair	DUAL
each_compli	Yes	Yes	-	Yes
Maximum forward voltage	0.7150 V	0.7150 V	-	0.7150 V
jesd_30_code	R-PDSO-G3	R-PDSO-G3	-	R-PDSO-G3
jesd_609_code	e3	e3	-	e3
moisture_sensitivity_level	1	1	-	1
Maximum non-repetitive peak forward current	1 A	1 A	-	1 A
Minimum operating temperature	-65 Cel	-65 Cel	-	-65 Cel
Maximum operating temperature	150 Cel	150 Cel	-	150 Cel
Maximum output current	0.1500 A	0.1500 A	-	0.1500 A
eak_reflow_temperature__cel_	260	260	-	260
wer_dissipation_max	0.3500 W	0.3500 W	-	0.3500 W
eference_standard	AEC-Q101	AEC-Q101	-	AEC-Q101
sub_category	Rectifier Diodes	Rectifier Diodes	-	Rectifier Diodes
ime_peak_reflow_temperature_max__s_	40	40	-	40
dditional_feature	HIGH RELIABILITY	HIGH RELIABILITY	-	HIGH RELIABILITY

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