TSM680P06
Taiwan Semiconductor
P-Channel Power MOSFET
-60V, -18A, 68mΩ
FEATURES
●
●
●
●
●
●
Improved dV/dt capability
Fast switching
100% Eas Guaranteed
Pb-free plating
RoHS compliant
Halogen-free mold compound
KEY PERFORMANCE PARAMETERS
PARAMETER
V
DS
V
GS
= -10V
R
DS(on)
(max)
Q
g
V
GS
= -4.5V
VALUE
-60
68
mΩ
110
16.4
nC
UNIT
V
APPLICATION
●
●
●
Motor Drive
Power Tools
LED Lighting
TO-220
ITO-220
TO-251S (IPAK SL)
TO-252 (DPAK)
Notes:
Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
SYMBOL IPAK/DPAK ITO-220 TO-220 UNIT
V
DS
V
GS
T
C
= 25°C
T
C
= 100°C
I
D
I
DM
P
DTOT
E
AS
I
AS
T
J
, T
STG
20
(Note 3)
(Note 3)
-60
±20
-18
-11
-72
17
12.8
-16
- 55 to +150
42
V
V
A
A
W
mJ
A
°C
(Note 2)
Total Power Dissipation @ T
C
= 25°C
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Operating Junction and Storage Temperature Range
THERMAL PERFORMANCE
PARAMETER
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
SYMBOL IPAK/DPAK ITO-220 TO-220 UNIT
R
ӨJC
R
ӨJA
6.1
62
7.5
3
°C/W
°C/W
Notes:
R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air.
Document Number: DS_P0000127
1
Version: F15
TSM680P06
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
C
= 25°C unless otherwise noted)
PARAMETER
Static
(Note 4)
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
V
GS
= 0V, I
D
= -250µA
V
DS
= V
GS
, I
D
= -250µA
V
GS
= ±20V, V
DS
= 0V
V
DS
= -60V, V
GS
= 0V
V
DS
= -48V, T
C
= 125°C
V
GS
= -10V, I
D
= -6A
V
GS
= -4.5V, I
D
= -3A
V
DS
= -10V, I
D
= -6A
BV
DSS
V
GS(TH)
I
GSS
I
DSS
-60
-1.2
--
--
--
--
--
-1.6
--
--
--
54
72
8.5
--
-2.2
±100
-1
-10
68
110
--
--
--
--
--
--
--
--
V
V
nA
µA
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
(Note 5)
R
DS(on)
g
fs
--
--
--
--
--
--
--
--
--
mΩ
S
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Switching
(Note 6)
Q
g
V
DS
= -30V, I
D
= -6A,
V
GS
= -10V
Q
gs
Q
gd
C
iss
V
DS
= -30V, V
GS
= 0V,
f = 1.0MHz
F = 1MHz, open drain
C
oss
C
rss
R
g
16.4
2.8
3.6
870
70
42
16
nC
pF
Ω
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Maximum Continuous Forward
Current
Maximum Pulse Forward Current
Notes:
1.
2.
3.
4.
5.
6.
Current limited by package
Pulse width limited by the maximum junction temperature
L = 0.1mH, I
AS
= -16A, V
DD
= -25V, R
G
= 25Ω, Starting T
J
= 25 C
Pulse test: PW
≤
300µs, duty cycle
≤
2%
For DESIGN AID ONLY, not subject to production testing.
Switching time is essentially independent of operating temperature.
o
t
d(on)
V
DD
= -30V,
R
GEN
= 6Ω,
I
D
= -1A
(Note 3)
--
--
--
--
8.3
29.6
51.7
15.6
--
--
--
--
ns
t
r
t
d(off)
t
f
I
S
= -1A, V
GS
= 0V
I
S
=1A
dI
F
/dt = 100A/µs
Integral reverse diode
in the MOSFET
V
SD
t
rr
Q
rr
I
S
I
SM
--
--
--
--
--
--
20
10
--
--
-1
--
--
-13
-52
V
ns
nC
A
A
Document Number: DS_P0000127
2
Version: F15
TSM680P06
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
TSM680P06CZ C0G
TSM680P06CI C0G
TSM680P06CH C5G
TSM680P06CP ROG
PACKAGE
TO-220
ITO-220
TO-251S (IPAK SL)
TO-252 (DPAK)
PACKING
50pcs / Tube
50pcs / Tube
75pcs / Tube
2,500pcs / 13” Reel
Note:
1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
2. Halogen-free according to IEC 61249-2-21 definition
Document Number: DS_P0000127
3
Version: F15
TSM680P06
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Continuous Drain Current vs. Tc
-I
D
, Continuous Drain Current (A)
Normalized On Resistance (mΩ)
Normalized Rds(on) vs. Tj
T
C
, Case Temperature (°C)
Normalized Vth vs. Tj
T
J
, Junction Temperature (°C)
Gate Charge Waveform
-V
GS
, Gate to Source Voltage (V)
Normalized Gate Threshold Voltage (V)
T
J
, Junction Temperature (°C)
Qg, Gate Charge (nC)
Maximum Safe Operation Area (TO-251S)
Normalized Transient Impedance (TO-251S)
-I
D
, Continuous Drain Current (A)
Normalized Thermal Response
Square Wave Pulse Duration (s)
-V
DS
, Drain to Source Voltage (V)
Document Number: DS_P0000127
4
Version: F15
TSM680P06
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Normalized Transient Impedance (TO-252)
Normalized Thermal Response
-I
D
, Continuous Drain Current (A)
Square Wave Pulse Duration (s)
Normalized Transient Impedance (TO-220)
Normalized Thermal Response (R
θJC
)
-I
D
, Continuous Drain Current (A)
Maximum Safe Operation Area (TO-252)
-V
DS
, Drain to Source Voltage (V)
Maximum Safe Operation Area (TO-220)
Square Wave Pulse Duration (s)
-V
DS
, Drain to Source Voltage (V)
Maximum Safe Operation Area (ITO-220)
-I
D
, Continuous Drain Current (A)
Normalized Transient Impedance (ITO-220)
Normalized Thermal Response (R
θJC
)
Square Wave Pulse Duration (s)
-V
DS
, Drain to Source Voltage (V)
Document Number: DS_P0000127
5
Version: F15
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