V23990-P824-F10-PM
preliminary datasheet
flowPACK 1 3rd gen
Features
●
Compact flow1 housing
●
Compact and Low Inductance Design
●
Built-in NTC
600V/75A
flow1 housing
Target Applications
●
Motor Drive
●
Power Generation
●
UPS
Schematic
Types
●
V23990-P824-F10
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
59
225
94
V
A
A
W
V
μs
V
°C
±20
6
360
175
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
48
150
69
V
A
A
W
°C
175
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+150
°C
°C
copyright
by
Vincotech
1
Revision: 2
V23990-P824-F10-PM
preliminary datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V
is
t=1min
4000
min 12,7
min 12,7
V
DC
mm
mm
copyright
by
Vincotech
2
Revision: 2
V23990-P824-F10-PM
preliminary datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Vcc=480V
Thermal grease
thickness≤50um
λ
= 1 W/mK
±15
75
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgoff=4
Ω
Rgon=4
Ω
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
VCE=VGE
15
0
20
600
0
0,0012
75
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
1,1
5,8
1,54
1,79
6,5
2,2
0,5
650
4
160
162
21
26
208
242
105
118
1,08
1,60
1,99
2,76
4620
288
137
470
nC
pF
V
V
mA
nA
Ω
ns
±15
300
75
mWs
Thermal resistance chip to heatsink per chip
R
thJH
1,01
K/W
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
Erec
Thermal grease
thickness≤50um
λ
= 1 W/mK
Rgon=4
Ω
±15
300
75
75
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,2
1,79
1,75
58
88
133
169
2,23
6,83
3338
3540
0,51
1,50
1,38
2,2
V
A
ns
nC
A/μs
mWs
Thermal resistance chip to heatsink per chip
R
thJH
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation given Epcos-Typ
B-value
R
25
D
R/R
P
B
(25/100)
Tol. ±3%
Tol. ±5%
R100=435Ω
Tj=25°C
Tc=100°C
Tj=25°C
Tj=25°C
4,2
4,7
2,6
210
3530
5,8
kΩ
%/K
mW
K
copyright
by
Vincotech
3
Revision: 2
V23990-P824-F10-PM
preliminary datasheet
Output Inverter
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
210
IC (A)
Output inverter IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
210
IC (A)
Output inverter IGBT
175
175
140
140
105
105
70
70
35
35
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
250
μs
25
°C
VGE from 7 V to 17 V in steps of 1 V
At
t
p
=
T
j
=
250
μs
150
°C
VGE from 7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
Ic = f(V
GE
)
75
I
C
(A)
Output inverter IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
210
I
F
(A)
Output inverter FRED
175
60
140
45
105
30
Tj = Tj
max
-25°C
70
15
35
Tj = Tj
max
-25°C
Tj = 25°C
Tj = 25°C
0
0
2
4
6
8
V
GE
(V)
10
0
0
0,5
1
1,5
2
2,5
V
F
(V)
3
At
t
p
=
V
CE
=
250
10
μs
V
At
t
p
=
250
μs
copyright
by
Vincotech
4
Revision: 2
V23990-P824-F10-PM
preliminary datasheet
Output Inverter
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I
c
)
5
E (mWs)
Output inverter IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R
G
)
5
Output inverter IGBT
E
off
4
E (mWs)
4
E
on
3
E
off
E
on
3
E
off
E
on
E
off
2
2
E
on:
1
1
0
0
30
60
90
120
I
C
(A)
150
0
0
4
8
12
16
R
G
(
Ω
)
20
With an inductive load at
T
j
=
°C
25/150
V
CE
=
300
V
V
GE
=
±15
V
R
gon
=
4
Ω
R
goff
=
4
Ω
With an inductive load at
T
j
=
°C
25/150
V
CE
=
300
V
V
GE
=
±15
V
I
C
=
75
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E
rec
= f(I
c
)
2,5
E (mWs)
Output inverter IGBT
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(R
G
)
2,5
Output inverter IGBT
E
rec
2
E (mWs)
2
1,5
1,5
E
rec
1
1
E
rec
E
rec
0,5
0,5
0
0
30
60
90
120
I
C
(A)
150
0
0
4
8
12
16
R
G
(
Ω
)
20
With an inductive load at
T
j
=
25/150
°C
V
CE
=
300
V
V
GE
=
±15
V
R
gon
=
4
Ω
With an inductive load at
T
j
=
25/150
°C
V
CE
=
300
V
V
GE
=
±15
V
I
C
=
75
A
copyright
by
Vincotech
5
Revision: 2
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