StrongIRFET™
IRFB7545PbF
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
60V
4.9m
5.9m
95A
G
S
max
I
D
Benefits
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
G
Gate
S
D
G
TO-220AB
D
Drain
S
Source
Base part number
IRFB7545PbF
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFB7545PbF
RDS(on), Drain-to -Source On Resistance (m
)
14
ID = 57A
12
10
8
6
4
2
4
6
8
10
12
14
16
18
20
T J = 125°C
100
80
ID, Drain Current (A)
60
40
20
T J = 25°C
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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Absolute Maximum Rating
IRFB7545PbF
Units
A
W
W/°C
V
°C
Parameter
Max.
Continuous Drain Current, V
GS
@ 10V
95
Continuous Drain Current, V
GS
@ 10V
67
Pulsed Drain Current
380
Maximum Power Dissipation
125
Linear Derating Factor
0.83
V
GS
Gate-to-Source Voltage
± 20
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
Symbol
Max.
Parameter
140
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
235
Single Pulse Avalanche Energy
I
AR
Avalanche Current
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Junction-to-Case
R
JC
–––
1.21
Case-to-Sink, Flat Greased Surface
R
CS
0.50
–––
Junction-to-Ambient
R
JA
–––
62
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
I
DSS
I
GSS
R
G
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
60
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Units
mJ
A
mJ
Units
°C/W
Typ. Max. Units
Conditions
––– –––
V V
GS
= 0V, I
D
= 250µA
46
––– mV/°C Reference to 25°C, I
D
= 1mA
4.9
5.9
m V
GS
= 10V, I
D
= 57A
6.3
–––
V
GS
= 6.0V, I
D
= 29A
–––
3.7
V V
DS
= V
GS
, I
D
= 100µA
–––
1.0
V
DS
= 60V, V
GS
= 0V
µA
––– 150
V
DS
= 60V,V
GS
= 0V,T
J
=125°C
––– 100
V
GS
= 20V
nA
––– -100
V
GS
= -20V
2.3
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 88µH, R
G
= 50, I
AS
= 57A, V
GS
=10V.
57A, di/dt
810A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
I
SD
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 22A, V
GS
=10V.
2
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November 5, 2014
IRFB7545PbF
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
90
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
75
19
24
32
12
72
44
43
4010
370
230
370
470
Typ.
–––
–––
–––
12
33
37
36
48
2.0
Max. Units
Conditions
–––
S V
DS
= 25V, I
D
= 57A
110
I
D
= 57A
–––
V
DS
= 30V
nC
–––
V
GS
= 10V
–––
–––
V
DD
= 30V
–––
I
D
= 57A
ns
–––
R
G
= 2.7
V
GS
= 10V
–––
–––
–––
–––
–––
–––
Max. Units
95
A
380
1.2
–––
–––
–––
–––
–––
–––
V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.7
V
GS
= 0V, VDS = 0V to 48V
V
GS
= 0V, VDS = 0V to 48V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
pF
Diode Characteristics
D
G
S
T
J
= 25°C,I
S
= 57A,V
GS
= 0V
V/ns T
J
= 175°C,I
S
= 57A,V
DS
= 60V
T
J
= 25°C
V
DD
= 51V
ns
T
J
= 125°C
I
F
= 57A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
3
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1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRFB7545PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
4.5V
10
1
4.5V
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.4
ID = 57A
V GS = 10V
ID, Drain-to-Source Current (A)
100
TJ = 175°C
10
TJ = 25°C
1
V DS = 25V
60µs PULSE WIDTH
2.0
1.6
1.2
0.8
0.1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
V GS, Gate-to-Source Voltage (V)
0.4
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
ID = 57A
V GS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
V DS= 48V
V DS= 30V
V DS= 12V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
V DS, Drain-to-Source Voltage (V)
100
0
10 20 30 40 50 60 70 80 90 100
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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Fig 8.
Typical Gate Charge vs.
Gate-to-Source Voltage
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November 5, 2014
1000
IRFB7545PbF
100µsec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
1msec
100
TJ = 175°C
10
TJ = 25°C
10
1
OPERATION
IN THIS
AREA
LIMITED BY
RDS(on)
10msec
DC
V GS = 0V
1.0
0.2
0.6
1.0
1.4
1.8
V SD, Source-to-Drain Voltage (V)
0.1
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
VDS, Drain-to-Source Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
0.6
80
Id = 1.0mA
78
76
74
72
70
68
66
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
Energy (µJ)
0.5
0.4
0.3
0.2
0.1
0.0
-10
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance (
m)
Fig 12.
Typical C
oss
Stored Energy
16
14
12
10
8
6
4
0
40
80
120
160
200
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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November 5, 2014
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