IRLML6344TRPbF
HEXFET
®
Power MOSFET
V
DS
V
GS Max
R
DS(on) max
(@V
GS
= 4.5V)
30
± 12
29
37
V
V
mΩ
mΩ
S
2
G 1
3 D
R
DS(on) max
(@V
GS
= 2.5V)
Micro3
TM
(SOT-23)
IRLML6344TRPbF
Application(s)
•
Load/ System Switch
Features and Benefits
Low R
DSon
(<29mΩ)
Industry-standard SOT-23 Package
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer Qualification
Base Part Number
IRLML6344TRPbF
Package Type
Micro3™(SOT-23)
Standard Pack
Form
Quantity
Tape and Reel
3000
Benefits
Lower Conduction Losses
Multi-vendor compatibility
results in
Environmentally friendly
Increased Reliability
Orderable Part Number
IRLML6344TRPbF
Absolute Maximum Ratings
Symbol
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
30
5.0
4.0
25
1.3
0.8
0.01
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Symbol
R
θJA
R
θJA
Parameter
Junction-to-Ambient
e
Typ.
–––
–––
Max.
100
99
Units
°C/W
Junction-to-Ambient (t<10s)
f
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
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IRLML6344TRPbF
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
30
–––
–––
–––
0.5
–––
–––
–––
–––
–––
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.02
22
27
0.8
–––
–––
–––
–––
1.7
–––
6.8
0.3
2.4
4.2
5.6
22
9.1
650
65
46
–––
–––
29
37
1.1
1.0
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
V
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 4.5V, I
D
= 5.0A
V
GS
= 2.5V, I
D
V
DS
= V
GS
, I
D
= 10μA
V
DS
=24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 12V
V
GS
= -12V
V
DS
= 10V, I
D
= 5.0A
I
D
= 5.0A
V
DS
=15V
V
DD
V
GS
= 4.5V
I
D
= 1.0A
R
G
= 6.8Ω
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V/°C Reference to 25°C, I
D
= 1mA
mΩ
V
μA
nA
Ω
S
d
= 4.0A
d
d
=15V
d
Source - Drain Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
10
3.8
1.3
A
25
1.2
15
5.7
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, V
R
= 15V, I
F
=1.3A
di/dt = 100A/μs
G
S
D
Ã
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
T
J
= 25°C, I
S
= 5.0A, V
GS
= 0V
d
d
Notes
through
are on page 10
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IRLML6344TRPbF
100
TOP
VGS
10V
4.5V
2.5V
2.0V
1.9V
1.7V
1.5V
1.4V
100
TOP
VGS
10V
4.5V
2.5V
2.0V
1.9V
1.7V
1.5V
1.4V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
1.4V
1
1
1.4V
≤60μs
PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
≤60μs
PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
ID = 5.0A
VGS = 4.5V
1.5
10
T J = 150°C
1
T J = 25°C
VDS = 15V
≤60μs
PULSE WIDTH
1.0
1.5
2.0
2.5
1.0
0.1
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
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Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRLML6344TRPbF
10000
C oss = C ds + Cgd
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + Cgd, C ds SHORTED
C rss = C gd
14.0
ID= 5.0A
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 24V
VDS= 15V
VDS= 6.0V
C, Capacitance (pF)
1000
Ciss
100
Coss
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0.0
4.0
8.0
12.0
16.0
20.0
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1msec
100μsec
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
10
10
T J = 150°C
1
1
T J = 25°C
VGS = 0V
0.1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
VSD, Source-to-Drain Voltage (V)
0.1
T A = 25°C
Tj = 150°C
Single Pulse
0.01
0.1
1
10msec
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
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Fig 8.
Maximum Safe Operating Area
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IRLML6344TRPbF
5.0
V
DS
4.0
R
D
V
GS
R
G
D.U.T.
+
ID , Drain Current (A)
3.0
-
V
DD
V
GS
2.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
1.0
Fig 10a.
Switching Time Test Circuit
V
DS
0.0
25
50
75
100
125
150
90%
T A , Ambient Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1000
Thermal Response ( Z thJA ) °C/W
100
10
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.001
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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