UNISONIC TECHNOLOGIES CO., LTD
UTT12P10
100V, 12A P-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
UTT12P10
is a P-channel power MOSFET using
UTC’s advanced technology to provide the customers with high
switching speed, cost-effectiveness and a minimum on-state
resistance. It can also withstand high energy in the avalanche.
FEATURES
* R
DS(ON)
< 0.2Ω @ V
GS
=-10V, I
D
=-12A
* High Switching Speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Package
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
UTT12P10L-TM3-T
UTT12P10G-TM3-T
UTT12P10L-TN3-R
UTT12P10G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
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1 of 6
QW-R502-722.F
UTT12P10
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
J
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
-100
V
Gate-Source Voltage
V
GSS
±20
V
Continuous,
T
C
=25°C
I
D
-12
A
V
GSS
@-10V
Drain Current
Pulsed (Note 2)
I
DM
-48
A
60
mJ
Single Pulsed (Note 2)
E
AS
Power Dissipation (T
C
=25°C)
P
D
125
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. V
DD
=-25V, starting T
J
=25°C, L=0.83mH, R
G
=25Ω, I
AS
=12A. (See Figure 2)
THERMAL DATA
PARAMETER
SYMBOL
θ
JC
RATINGS
1.0
UNIT
°C/W
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
Forward
Reverse
I
GSS
TEST CONDITIONS
I
D
=-250µA, V
GS
=0V
V
DS
=-100V, V
GS
=0V
V
GS
=+20V
V
GS
=-20V
MIN TYP MAX UNIT
-100
-1
+100
-100
V
µA
nA
nA
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=-250µA
-2.0
-4.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=-10V, I
D
=-12A (Note 2)
0.2
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
1400
V
DS
=-25V, V
GS
=0V, f=1.0MHz
Output Capacitance
C
OSS
590
140
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
40
50
V
DD
=-50V, I
D
=-12A, R
G
=9.1Ω,
Rise Time
t
R
38
45
R
D
= 2.4Ω, See Fig. 1(Note 2)
Turn-OFF Delay Time
t
D(OFF)
314 330
Fall-Time
t
F
66
75
Total Gate Charge
Q
G
35
40
V
DS
=-80V, V
GS
=-10V, I
D
=-12A,
Gate to Source Charge
Q
GS
8
See Fig 3 (Note 2)
6
Gate to Drain ("Miller") Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
-12
Maximum Body-Diode Pulsed Current
I
SM
(Note 1)
-48
Drain-Source Diode Forward Voltage
V
SD
T
J
=25°C, I
S
=-12A,V
GS
=0V(Note 2)
-5.0
Body Diode Reverse Recovery Time
t
RR
130 260
T
J
=25°C, I
F
=-12A,
di/dt=100A/µs (Note 2)
0.35 0.70
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse width
≤
300µs; duty cycle
≤
2%.
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QW-R502-722.F
UTT12P10
TEST CIRCUITS AND WAVEFORMS
V
DS
90%
R
G
D.U.T.
R
D
V
GS
V
DS
Power MOSFET
-10V
Pulse Width≤1μs
Duty Factor≤0.1%
Fig. 1a Switching Time Test Circuit
Fig. 2a Unclampled Inductive Test Circuit
Fig.3a Gate Charge Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
+
-
V
DD
10%
V
GS
T
D(ON)
T
R
T
D(OFF)
T
F
Fig. 1b Switching Time Waveforms
Fig. 2b Unclampled Inductive Waveforms
Fig. 3b Gate Charge Waveform
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QW-R502-722.F
UTT12P10
TEST CIRCUITS AND WAVEFORMS(Cont.)
Power MOSFET
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. V
DD
=-25V, starting T
J
=25°C, L=2.7mH, R
G
=25Ω, I
AS
=-12A. (See Figure 2)
3. I
SD
≤-12A,
di/dt≤200A/µs, V
DD
≤BV
DSS
, T
J
≤175°C
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+
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QW-R502-722.F
UTT12P10
TYPICAL CHARACTERISTICS
300
250
200
150
100
50
0
Drain Current vs. Drain-Source
Breakdown Voltage
Power MOSFET
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
0
0
Drain Current, -I
D
(µA)
0
30
60
90
120
150
Drain Current, -I
D
(µA)
0.5
1
1.5
2
2.5
3
Drain-Source Breakdown Voltage, -BV
DSS
(V)
Gate Threshold Voltage, -V
TH
(V)
Drain Current, -I
D
(A)
UNISONIC TECHNOLOGIES CO., LTD
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Drain Current, -I
D
(A)
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QW-R502-722.F
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