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BLF278

Description
RF POWER, FET
CategoryDiscrete semiconductor    The transistor   
File Size185KB,21 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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RF POWER, FET

BLF278 Parametric

Parameter NameAttribute value
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)18 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)500 W
surface mountNO
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF278
VHF push-pull power MOS
transistor
Product Specification
Supersedes data of October 1992
1996 Oct 21
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