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7M7005S50CHB

Description
Memory Circuit, EEPROM+SRAM, Hybrid, CPGA66
Categorystorage    storage   
File Size493KB,10 Pages
ManufacturerIDT (Integrated Device Technology)
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7M7005S50CHB Overview

Memory Circuit, EEPROM+SRAM, Hybrid, CPGA66

7M7005S50CHB Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum access time50 ns
JESD-30 codeS-XPGA-P66
JESD-609 codee0
Memory IC TypeMEMORY CIRCUIT
Mixed memory typesEEPROM+SRAM
Number of terminals66
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialCERAMIC
encapsulated codePGA
Encapsulate equivalent codePGA66,11X11
Package shapeSQUARE
Package formGRID ARRAY
Peak Reflow Temperature (Celsius)260
power supply5 V
Certification statusNot Qualified
Filter levelMIL-STD-883 Class B (Modified)
Maximum standby current0.046 A
Maximum slew rate0.6 mA
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyHYBRID
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal pitch2.54 mm
Terminal locationPERPENDICULAR
Maximum time at peak reflow temperature6

7M7005S50CHB Related Products

7M7005S50CHB 7M7005S945CHB 7M7005S949CHB
Description Memory Circuit, EEPROM+SRAM, Hybrid, CPGA66 Memory IC Memory IC
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code not_compliant unknow unknown
ECCN code EAR99 EAR99 EAR99

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