DTC123E_15 datasheet, PDF - EEWORLD Datasheet

DTC123E_15: DescriptionDIGITAL TRANSISTORS; File Size210KB，3 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/

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DTC123E_15 Overview

DIGITAL TRANSISTORS

DTC123E_15 Related Products

	DTC123E_15	DTC123EG-AE3-R	DTC123EG-AL3-R	DTC123EG-T92-B	DTC123EG-AN3-R	DTC123EG-T92-K
Description	DIGITAL TRANSISTORS	DIGITAL TRANSISTORS	DIGITAL TRANSISTORS	DIGITAL TRANSISTORS	DIGITAL TRANSISTORS	DIGITAL TRANSISTORS
Is it Rohs certified?	-	conform to	conform to	conform to	conform to	conform to
Maker	-	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD
package instruction	-	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	CYLINDRICAL, O-PBCY-T3	SMALL OUTLINE, R-PDSO-G3	CYLINDRICAL, O-PBCY-T3
Contacts	-	3	3	3	3	3
Reach Compliance Code	-	compli	compli	compli	compli	compli
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	-	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	-	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	-	50 V	50 V	50 V	50 V	50 V
Configuration	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	-	20	20	20	20	20
JESD-30 code	-	R-PDSO-G3	R-PDSO-G3	O-PBCY-T3	R-PDSO-G3	O-PBCY-T3
Number of components	-	1	1	1	1	1
Number of terminals	-	3	3	3	3	3
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	ROUND	RECTANGULAR	ROUND
Package form	-	SMALL OUTLINE	SMALL OUTLINE	CYLINDRICAL	SMALL OUTLINE	CYLINDRICAL
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	-	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	-	0.2 W	0.2 W	0.625 W	0.15 W	0.625 W
surface mount	-	YES	YES	NO	YES	NO
Terminal form	-	GULL WING	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE
Terminal location	-	DUAL	DUAL	BOTTOM	DUAL	BOTTOM
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	-	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	-	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz

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