UNISONIC TECHNOLOGIES CO., LTD
3N60
3A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
3N60
is a high voltage and high current power
MOSFET , designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
FEATURES
* V
DS
= 600V, I
D
= 3A
* R
DS(ON)
< 3.6Ω @V
GS
= 10 V
* Ultra low gate charge ( typical 18 nC )
* Low reverse transfer capacitance ( C
RSS
= typical 5.5 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
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QW-R502-110.H
3N60
ORDERING INFORMATION
Package
TO-220
TO-220F1
TO-220F
TO-220F3
TO-251
TO-252
Ordering Number
Lead Free
Halogen Free
3N60L-TA3-T
3N60G-TA3-T
3N60L-TF1-T
3N60G-TF1-T
3N60L-TF3-T
3N60G-TF3-T
3N60L-TF3T-T
3N60G-TF3T-T
3N60L-TM3-T
3N60G-TM3-T
3N60L-TN3-R
3N60G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Power MOSFET
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
MARKING INFORMATION
PACKAGE
TO-220
TO-220F
TO-220F1
TO-220F3
TO-251
TO-252
MARKING
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QW-R502-110.H
3N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
SYMBOL
V
DSS
V
GSS
I
AR
I
D
I
DM
E
AS
E
AR
dv/dt
Power MOSFET
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
TO-220
TO-220F/TO-220F1
34
Power Dissipation
P
D
W
TO-220F3
TO-251/TO-252
50
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
.
3. L=44.4mH, I
AS
=3A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
4. I
SD
≤3.0A,
di/dt≤200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
RATINGS
600
±30
3.0
3.0
12
200
7.5
4.5
75
UNIT
V
V
A
A
A
mJ
mJ
V/ns
THERMAL DATA
PARAMETER
TO-220
TO-220F/TO-220F1
TO-220F3
TO-251/TO-252
TO-220
TO-220F/TO-220F1
TO-220F3
TO-251/TO-252
SYMBOL
θ
JA
RATING
62.5
62.5
110
1.67
θ
JC
3.68
2.5
°C/W
UNIT
°C/W
Junction to Ambient
Junction to Case
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QW-R502-110.H
3N60
ELECTRICAL CHARACTERISTICS
(T
C
=25℃, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
Forward
Reverse
I
GSS
TEST CONDITIONS
V
GS
=0 V, I
D
=250
μA
V
DS
=600 V, V
GS
=0 V
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
600
10
100
-100
0.6
2.0
2.8
350
50
5.5
4.0
3.6
450
65
7.5
V
μA
nA
nA
V/℃
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
Breakdown Voltage Temperature
△
BV
DSS
/△T
J
I
D
=250μA, Referenced to 25°C
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10 V, I
D
=1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
=30V, I
D
=0.5A, R
G
=25Ω
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=50V, I
D
=1.3A, I
G
=100μA
Gate-Source Charge
Q
GS
V
GS
=10V (Note 1, 2)
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0 V, I
S
=3.0A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
V
GS
=0V, I
S
=3.0A,
dI
F
/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
35
50
60
70
100 150
65
75
18.5 23
5.2
4.9
1.4
3.0
12
210
1.2
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QW-R502-110.H
UNISONIC TECHNOLOGIES CO., LTD
3N60
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
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QW-R502-110.H
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