UNISONIC TECHNOLOGIES CO., LTD
3N90-E
3A, 900V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
3N90-E
provides excellent R
DS(ON)
, low gate charge
and operation with low gate voltages. This device is suitable for
use as a load switch or in PWM applications.
FEATURES
* R
DS(ON)
< 6.2Ω @ V
GS
=10V, I
D
=1.5A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
RDERING INFORMATION
Package
TO-251
TO-251S2
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
3N90L-TM3-T
3N90G-TM3-T
3N90L-TMS2-T
3N90G-TMS2-T
3N90L-TN3-R
3N90G-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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3N90-E
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (V
GS
=0V)
V
DSS
900
V
Drain-Gate Voltage (R
G
=20kΩ)
V
DGR
900
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
3
A
Continuous Drain Current
I
D
3
A
Pulsed Drain Current
I
DM
10
A
Single Pulse Avalanche Energy (Note 3)
E
AS
100
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
P
D
45
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. L = 22.2mH, I
AS
= 3A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≦3A,
di/dt≦200A/μs, V
DD
≦BV
DSS
, T
J
≦T
J(MAX)
.
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATING
110
2.77
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
MIN TYP MAX UNIT
900
1
±10
3.0
4.1
5.0
2.1
430
47
7.7
45
56
80
52
19.25
5.3
5
1.6
3
12
5.0
6.2
V
μA
μA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250μA
Drain-Source Leakage Current
I
DSS
V
DS
=900V, V
GS
=0V
Gate-Source Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=1.5A
Forward Transconductance (Note)
g
FS
V
DS
=15V, I
D
=1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DS
=30V, I
D
=0.5A, R
G
=25Ω
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DD
=50V, I
D
=1.3A, V
GS
=10V
Gate-Source Charge
Q
GS
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage(Note)
V
SD
I
SD
=3A ,V
GS
=0V
Source-Drain Current
I
SD
Source-Drain Current (Pulsed)
I
SDM
Note: Pulse width=300μs, Duty cycle≦1.5%.
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www.unisonic.com.tw
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3N90-E
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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QW-R205-007.C
3N90-E
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R205-007.C
UNISONIC TECHNOLOGIES CO., LTD
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3N90-E
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Power MOSFET
Drain Current vs. Gate Threshold Voltage
300
250
Drain Current, I
D
(µA)
200
150
100
50
0
300
250
Drain Current, I
D
(µA)
200
150
100
50
0
0
400
600
200
800 1000
Drain-Source Breakdown Voltage, BV
DSS
(V)
0
1
2
5
3
4
Gate Threshold Voltage, V
TH
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Source-Drain Current, I
SD
(A)
Drain Current, I
D
(mA)
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QW-R205-007.C
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