UNISONIC TECHNOLOGIES CO., LTD
3N65K-MK
Preliminary
Power MOSFET
3A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
3N65K-MK
is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in high speed switching applications at power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* R
DS(ON)
< 4.0Ω @ V
GS
= 10V, I
D
= 1.5A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
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QW-R205-009.b
3N65K-MK
ORDERING INFORMATION
Preliminary
Power MOSFET
Ordering Number
Lead Free
Halogen Free
3N65KL-TA3-T
3N65KG-TA3-T
3N65KL-TF3-T
3N65KG-TF3-T
3N65KL-TF1-T
3N65KG-TF1-T
3N65KL-TF2-T
3N65KG-TF2-T
3N65KL-TF3-T
3N65KG-TF3-T
3N65KL-TM3-T
3N65KG-TM3-T
3N65KL-TMS-T
3N65KG-TMS-T
3N65KL-TMS2-T
3N65KG-TMS2-T
3N65KL-TMS4-T
3N65KG-TMS4-T
3N65KL-TN3-R
3N65KG-TN3-R
3N65KL-TND-R
3N65KG-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
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Tube
Tape Reel
Tape Reel
MARKING
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QW-R205-009.b
3N65K-MK
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
3.0
A
Continuous Drain Current
I
D
3.0
A
Pulsed Drain Current (Note 2)
I
DM
12
A
75
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
7.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
75
W
TO-220F/TO-220F1
34
W
TO-220F3
Power Dissipation
P
D
TO-220F2
35
W
TO-251/TO-251S
TO-251S2/TO-251S4
50
W
TO-252/TO-252D
TO-220
0.6
W/°C
TO-220F/TO-220F1
0.27
W/°C
TO-220F3
Derate above 25°C
P
D
TO-220F2
0.28
W/°C
TO-251/TO-251S
TO-251S2/TO-251S4
0.4
W/°C
TO-252/TO-252D
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
.
3. L=16.6mH, I
AS
=3A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
4. I
SD
≤3.0A,
di/dt≤200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
RATING
62.5
θ
JA
110
1.67
3.68
θ
JC
3.58
2.5
°C/W
°C/W
UNIT
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
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QW-R205-009.b
3N65K-MK
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
650
V
10
μA
100 nA
-100 nA
V/°C
4.5
4.0
388
41
5.1
43
20
94
22
14
4.2
1.6
500
65
11
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
V
GS
= 0 V, I
D
= 250
μA
V
DS
= 650 V, V
GS
= 0 V
Forward
V
GS
= 30 V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30 V, V
DS
= 0 V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
= 30V, I
D
= 0.5A,
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 50V,I
D
= 1.3A,
Gate-Source Charge
Q
GS
V
GS
= 10 V (Note 1, 2)
Gate-Drain Charge
Q
DD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 3.0 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
0.6
2.5
16
1.4
3.0
12
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QW-R205-009.b
3N65K-MK
D.U.T.
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R205-009.b
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