• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PowerPAIR
®
3
x
3
G
2
S
2
8
S
2
7
S
2
6
5
S
1
/D
2
(Pin 9)
D
1
APPLICATIONS
• Synchronous buck
- Battery charging
- Computer system power
- Graphic cards
• POL
D
1
G
1
N-Channel 1
MOSFET
3
m
m
1
Top View
3m
m
1
2
G
1
3 D
1
4 D
1
D
1
Bottom View
S
1
/D
2
G
2
N-Channel 2
MOSFET
S
2
Ordering Information:
SiZ340DT-T1-GE3 (lead (Pb)-free and halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d,e
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
30
a
26.5
15.6
b,c
12.4
b,c
100
13.9
3.1
b,c
10
5
16.7
10.7
3.7
b,c
2.4
b,c
-55 to 150
260
Channel-1
30
+20, -16
40
a
40
a
22.6
b,c
18.1
b,c
150
26
3.5
b,c
15
11
31
20
4.2
b,c
2.7
b,c
°C
W
mJ
A
Channel-2
Unit
V
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
S14-0611-Rev. B, 24-Mar-14
Document Number: 62877
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ340DT
www.vishay.com
Vishay Siliconix
Channel-1
Typ.
27
6
Max.
34
7.5
Channel-2
Typ.
24
3.2
Max.
30
4
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a,b
Maximum Junction-to-Case (Drain)
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJC
Unit
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 69 °C/W for channel-1 and 64 °C/W for channel-2.
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate Source Leakage
V
DS
ΔV
DS
/T
J
ΔV
GS(th
)/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
=0 V, V
GS
= +20 V, -16 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
=0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
≥
5 V,V
GS
= 10 V
V
GS
= 10 V, I
D
= 15.6 A
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 13 A
V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, I
D
= 15.6 A
V
DS
= 15 V, I
D
= 20 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
30
30
-
-
-
-
1
1
-
-
-
-
-
-
10
10
-
-
-
-
-
-
-
-
-
-
-
-
0.042
0.025
-
-
-
-
-
-
-
-
-
-
0.3
0.3
-
-
18.4
30
-4.3
-5
-
-
-
-
-
-
-
-
-
-
0.0079
0.0042
0.0110
0.0058
37
60
760
1552
250
450
32
40
-
-
12.3
22.6
5.6
10.1
2.3
4.2
1
1.8
6.6
12.4
1.7
1.3
-
V
-
-
-
mV/°C
-
-
2.4
V
2.4
± 100
nA
± 100
1
1
μA
5
5
-
A
-
0.0095
0.0051
Ω
0.0137
0.0070
-
S
-
-
-
-
-
-
-
0.084
0.050
19
35
9
16
-
-
-
-
-
-
3.4
2.6
Symbol
TEST CONDITIONS
Min.
Typ.
Max.
Unit
Drain-Source On-State Resistance
b
R
DS(on)
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
rss
/ C
iss
Ratio
g
fs
C
iss
C
oss
C
rss
Channel-1
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
Channel-2
=15 V, V
GS
= 0 V, f = 1 MHz
pF
-
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 15.6 A
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
S14-0611-Rev. B, 24-Mar-14
Q
gs
Q
gd
Channel-1
V
DS
= 15 V,V
GS
= 4.5 V, I
D
= 15.6 A
V
DS
Channel-2
= 15 V,V
GS
= 4.5 V, I
D
= 20 A
nC
Q
oss
R
g
f = 1 MHz
Ω
Document Number: 62877
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ340DT
www.vishay.com
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Channel-1
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
Channel-2
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= 10 A, V
GS
= 0 V
T
C
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.8
0.82
20
26
9
20
11.5
18.1
8.5
7.9
13.9
25.8
100
150
1.2
1.2
35
40
20
30
-
-
-
-
ns
V
ns
nC
A
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
Ch-2
Ch-1
Ch-2
Ch-1
Chan nel-2
V
DD
=15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
Ch-2
Ch-1
Ch-2
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
Ch-2
Ch-1
Ch-2
Ch-1
Channel-2
V
DD
=15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
Ch-2
Ch-1
Ch-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
13
22
55
82
16
20
7
7
8
10
11
12
12
16
7
7
20
33
85
123
25
30
14
14
16
20
20
20
20
30
15
12
ns
Symbol
TEST CONDITIONS
Min.
Typ.
Max.
Unit
Vishay Siliconix
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-0611-Rev. B, 24-Mar-14
Document Number: 62877
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ340DT
www.vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
V
GS
= 10 V thru 4 V
40
I
D
- Drain Current (A)
I
D
- Drain Current (A)
4
T
C
= 25
°C
3
5
Vishay Siliconix
30
V
GS
= 3 V
20
2
10
V
GS
= 2 V
0
0
0.5
1
1.5
V
DS
- Drain-to-Source Voltage (V)
2
1
T
C
= 125
°C
T
C
= - 55
°C
0
0
0.6
1.2
1.8
2.4
3
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
0.020
900
C
iss
720
R
DS(on)
- On-Resistance (Ω)
0.015
V
GS
= 4.5 V
0.010
V
GS
= 10 V
C - Capacitance (pF)
540
360
C
oss
180
C
rss
0.005
0
0
10
20
30
I
D
- Drain Current (A)
40
50
0
0
5
10
15
V
DS
- Drain-to-Source Voltage (V)
20
On-Resistance vs. Drain Current
Capacitance
10
I
D
= 15.6 A
8
1.7
I
D
= 15.6 A
R
DS(on)
- On-Resistance (Normalized)
V
DS
= 8 V
V
GS
= 10 V
V
GS
-
Gate-to-Source
Voltage (V)
1.45
6
V
DS
= 15 V
V
DS
= 24 V
4
V
GS
= 4.5 V
1.2
2
0.95
0
0
2.6
5.2
7.8
10.4
Q
g
- Total
Gate
Charge (nC)
13
0.7
- 50
- 25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
S14-0611-Rev. B, 24-Mar-14
On-Resistance vs. Junction Temperature
Document Number: 62877
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ340DT
www.vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.02
I
D
= 15.6 A
Vishay Siliconix
I
S
-
Source
Current (A)
10
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
0.015
0.01
T
J
= 125
°C
T
J
= 25
°C
T
J
= 25
°C
1
0.005
0.1
0.0
0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.7
50
40
1.5
30
1.3
I
D
= 250 μA
Power (W)
125
150
V
GS(th)
(V)
20
1.1
10
0.9
- 50
- 25
0
25
50
75
100
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
1000
Single Pulse Power
100
Limited by R
DS(on)
*
I
D
- Drain Current (A)
10
100 μs
1 ms
1
10 ms
100 ms
1
s
10
s
DC
BVDSS Limited
0.1
T
A
= 25
°C
Single
Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
S14-0611-Rev. B, 24-Mar-14
Document Number: 62877
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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