BC807
SOT-23
TRANSISTOR(PNP)
SOT-23
贴片塑封三极管
SOT-23 Plastic-Encapsulate Transistors
特征
Features
与
BC817
配对;
Complementary to BC817
最大功率耗散
300mW; Power Dissipation of 300mW
高稳定性和可靠性。High
Stability and High Reliability
机械数据
Mechanical Data
封装:
SOT-23
封装
SOT-23 Small Outline Plastic Package
环氧树脂
UL
易燃等级
Epoxy UL: 94V-0
安装½½: 任意
Mounting Position: Any
极限值和温度特性(
TA = 25℃
除非另有规定)
Maximum Ratings & Thermal Characteristics
(
Ratings at 25℃ ambient temperature unless otherwise specified.)
参数
Parameters
Collector-Base Voltage
Collector-Emitter Voltage
Emitter -Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Thermal resistance from junction to ambient
电特性
(
TA = 25℃
除非另有规定)
Electrical Characteristics
(
Ratings at 25℃ ambient temperature unless otherwise specified).
参数
Parameter
符号
Symbols
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
测试条件
Test Condition
I
C
=-10uA, I
E
=0
I
C
=-10mA, I
B
=0
I
E
=-1uA, I
C
=0
V
CB
=-45V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-500mA
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-5V, I
C
=-10mA,f=100MHz
界限
Limits
Min
-50
-45
-5
Max
单½
Unit
V
V
V
nA
nA
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
Tstg
R
θJA
数值
Value
-50
-45
-5
-500
300
150
-55-+150
417
单½
Unit
V
V
V
mA
mW
℃
℃
℃/W
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base -emitter saturation voltage
Transition frequency
CLASSIFICATION OF h
FE(1)
RANK
RANGE
Marking
100
40
-100
-100
600
-0.70
-1.20
100
V
V
MHz
BC807-16
100-250
5A
BC807-25
160-400
5B
BC807-40
250-600
5C
Date:2018/8/2
BC807
SOT-23 PACKAGE OUTLINE
Plastic surface mounted package
焊盘设计参考
Precautions: PCB Design
Recommended land dimensions for SOT-23 diode. Electrode patterns for PCBs
Date:2018/8/2