SS8050 datasheet, PDF - EEWORLD Datasheet

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SS8050: DescriptionTransistor type: NPN Collector-emitter breakdown voltage (Vceo): 25V Collector current (Ic): 1.5A Power (Pd): 300mW Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 500mV@ 800mA, 80mA Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj); File Size1002KB，3 Pages; ManufacturerZRE

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SS8050 Overview

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 25V Collector current (Ic): 1.5A Power (Pd): 300mW Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 500mV@ 800mA, 80mA Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)

SS8050 Parametric

Parameter Name	Attribute value
Transistor type	NPN
Collector-emitter breakdown voltage (Vceo)	25V
Collector current (Ic)	1.5A
Power(Pd)	300mW
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib)	500mV@800mA,80mA
DC current gain (hFE@Ic,Vce)	-
Characteristic frequency (fT)	100MHz
Operating temperature	+150℃@(Tj)

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SS8050

SOT-23

TRANSISTOR(NPN)

SOT-23

贴片塑封三极管

SOT-23 Plastic-Encapsulate Transistors

特征

Features



与

SS8550

配对;

Complementary to SS8550



最大功率耗散

300mW; Power Dissipation of 300mW



高稳定性和可靠性。High

Stability and High Reliability

机械数据

Mechanical Data



封装:

SOT-23

封装

SOT-23 Small Outline Plastic Package

环氧树脂

UL

易燃等级

Epoxy UL: 94V-0

安装½½: 任意

Mounting Position: Any

Marking: Y1

极限值和温度特性(

TA = 25℃

除非另有规定)

Maximum Ratings & Thermal Characteristics

(

Ratings at 25℃ ambient temperature unless otherwise specified.)

参数

Parameters

Collector-Base Voltage

Collector-Emitter Voltage

Emitter -Base Voltage

Collector Current-Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Thermal resistance From junction to ambient

电特性

(

TA = 25℃

除非另有规定)

Electrical Characteristics

(

Ratings at 25℃ ambient temperature unless otherwise specified).

参数

Parameter

符号

Symbols

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CEO

I

EBO

h

FE(1)

h

FE(2)

V

CE(sat)

V

BE(sat)

f

T

测试条件

Test Condition

I

C

=100uA, I

E

=0

I

C

=0.1mA, I

B

=0

I

E

=100uA, I

C

=0

V

CB

=40V, I

E

=0

V

CE

=20V, I

B

=0

V

EB

=5V, I

C

=0

V

CE

=1V, I

C

=100mA

V

CE

=1V, I

C

=800mA

I

C

=800mA, I

B

=80mA

I

C

=800mA, I

B

=80mA

V

CE

=10V, I

C

=50mA,f=30MHz

界限

Limits

Min

40

25

5

Max

单½

Unit

V

nA

符号

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

Tstg

R

θJA

数值

Value

40

25

5

1500

300

150

-55-+150

417

单½

Unit

V

mA

mW

℃

℃/W

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base -emitter saturation voltage

Transition frequency

CLASSIFICATION OF h

FE(1)

RANK

RANGE

L

120

40

100

400

0.50

1.20

100

V

MHz

H

200-350

J

300-400

120-200

Date:2018/8/2

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