SMD Schottky Barrier Rectifiers
CDBB220-G Thru. CDBB2100-G
Reverse Voltage: 20 to 100 Volts
Forward Current: 2.0 Amp
RoHS Device
Features
-Ideal for surface mount applications.
-Metal-semiconductor Junction with Guarding.
-Epitaxial construction.
-Very low forward voltage drop.
-High current capability.
-For use in low voltage,high frequency in venters,
free wheeling, and polarity protection applications.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
-High temperature soldering guaranteed:.
250°C /10 seconds at terminals.
-Halogen free.
DO-214AA (SMB)
0.180(4.57)
0.160(4.06)
0.086(2.20)
0.077(1.95)
0.155(3.94)
0.130(3.30)
0.220(5.59)
0.205(5.21)
0.012(0.305)
0.006(0.152)
0.096(2.44)
0.083(2.13)
Mechanical data
-Case: JEDEC DO-214AA (SMB), molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.093 grams
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
Parameter
Max. repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
Max. average forward current
Max. instantaneous forward voltage at 2.0A DC
Max. DC reverse current at
rated DC blocking voltage (Note 1)
T
A
=25°C
T
A
=100°C
Symbol
V
RRM
V
DC
V
RMS
I
FSM
I
(AV)
V
F
I
R
C
J
R
θJL
T
J
T
STG
CDBB
220-G
20
20
14
CDBB
240-G
40
40
28
CDBB
260-G
60
60
42
50
2.0
CDBB
280-G
80
80
56
CDBB
2100-G
100
100
70
Units
V
V
V
A
A
0.55
0.75
0.5
15.0
75
15
-55 to +125
-65 to +150
0.85
V
mA
pF
°C/W
°C
°C
Typical. Junction Capacitance (Note 1)
Typical. Thermal resistance (Note 2)
Max. operating junction temperature
Storage temperature
Notes: 1. Measured at 1.0MH
Z
and applied reverse voltage of 4.0V DC.
2. Thermal resistance junction to lead.
REV:B
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Comchip Technology CO., LTD.
SMD Schottky Barrier Rectifiers
RATING AND CHARACTERISTIC CURVES (CDBB220-G Thru CDBB2100-G)
Fig.1 - Forward Current Derating Curve
2.8
2.4
60
T
J
=25 C
8.3ms single half sine
wave, JEDEC method
O
Fig.2 - Maximum Non-Repetitive Forward
Surge Current
Peak Forward Surge Current , (A)
Average Forward Current , (A)
50
2.0
1.6
1.2
0.8
0.4
40
30
20
0
0
Single Phase
Half wave 60Hz
Resistive or
Inductive Load
25
50
75
100
125
150
175
10
0
1
5
10
100
Ambient Temperature, (°C)
Number of Cycles at 60Hz
Fig.3 - Typical Instantaneous Forward
Characteristics
100
1000
Fig.4 - Typical Junction Capacitance
Instantaneous Forward Current, (A)
10
1.0
Capacitance, (pF)
T
J
=25 C
Pulse width 300μS
1% duty cycle
O
100
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
TJ=25°C , F=1MH
Z
0.1
1.0
4.0
10.0
100
Instantaneous Forward Voltage, (V)
Reverse Voltage, (V)
Fig.5 - Typical Reverse Characteristics
100
Instantaneous Reverse Current,(mA)
T
J
=75
O
C
10
1.0
T
J
=100°C
0.1
0.01
T
J
=25
O
C
0.001
0
20
40
60
80
100
120
140
Percent of Rated PEAK
REV:B
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Comchip Technology CO., LTD.
FPGA/CPLD
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