< Silicon RF Power MOS FET (Discrete)
>
RD01MUS2
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
DESCRIPTION
RD01MUS2 is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
This device has an internal monolithic zener diode from
gate to source for ESD protection.
OUTLINE DRAWING
4.4+/-0.1
TYPE NAME
1.6+/-0.1
LOT No.
1
0.
φ
1.5+/-0.1
•High power gain:
Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
•High Efficiency: 65%typ.
•Integrated gate protection diode
0.8 MIN 2.5+/-0.1
FEATURES
1
2
1.5+/-0.1
3
1.5+/-0.1
0.4 +0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
RoHS COMPLIANT
RD01MUS2-101,T113 is a RoHS compliant products.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Channel Temperature
Storage temperature
Thermal resistance
(Tc=25°C UNLESS OTHERWISE NOTED)
D
CONDITIONS RATINGS UNIT
Vgs=0V
30
V
Vds=0V
-5/+10
V
Tc=25
°C
3.6
W
Zg=Zl=50
100
mW
-
600
mA
-
150
°C
-
-40 to +125
°C
Junction to case
34.5
°C/W
G
S
SCHEMATIC DRAWING
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL
I
DSS
I
GSS
Vth
Pout
d
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
(Tc=25°C, UNLESS OTHERWISE NOTED)
CONDITIONS
MIN
-
-
1.3
0.8
50
LIMITS
TYP
-
-
1.8
1.4
65
UNIT
MAX
50
1
2.3
-
-
uA
uA
V
W
%
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
V
DD
=7.2V, Pin=30mW
f=520MHz,Idq=100mA
Note: Above parameters, ratings, limits and conditions are subject to change.
Publication Date : Oct．2011
1
3.9+/-0.3
< Silicon RF Power MOS FET (Discrete)
>
RD01MUS2
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
TYPICAL CHARACTERISTICS
4
CHANNEL DISSIPATION Pch(W)
...
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
Vgs-Ids CHARACTERISTICS
1.0
Ta=+25°C
Vds=10V
3
Ids(A)
On PCB(*1) with Heat-sink
0.8
0.6
0.4
0.2
0.0
2
1
On PCB(*1)
0
0
40
80
120
160
AMBIENT TEMPERATURE Ta(°C)
200
0
1
2
3
Vgs(V)
4
5
Vds-Ids CHARACTERISTICS
2.5
Ta=+25°C
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vds VS. Ciss CHARACTERISTICS
20
18
16
14
Ciss(pF)
Ta=+25°C
f=1MHz
2
Ids(A)
1.5
Vgs=5V
12
10
8
6
4
2
0
0
5
10
Vds(V)
15
20
1
Vgs=4V
0.5
Vgs=3V
0
0
2
4
6
Vds(V)
8
10
Vds VS. Coss CHARACTERISTICS
20
18
16
14
Coss(pF)
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
4
Ta=+25°C
f=1MHz
3
Crss(pF)
12
10
8
6
4
2
0
0
5
10
Vds(V)
15
20
2
1
0
0
5
10
Vds(V)
15
20
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete)
>
RD01MUS2
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
35
30
Po(dBm) , Gp(dB) ,
Idd(A)
Po
Pin-Po CHARACTERISTICS
80
70
Pout(W) , Idd(A)
25
20
15
10
5
0
-10
Gp
60
ηd(%)
40
η½
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=100mA
30
20
10
Idd
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=100mA
40
20
0
0
10
Pin(dBm)
20
0
20
40
Pin(mW)
60
Vdd-Po CHARACTERISTICS
4.0
3.5
3.0
Po(W)
Ta=25°C
f=520MHz
Pin=30mW
Idq=100mA
Zg=ZI=50 ohm
Po
Vgs-Ids CHARACTORISTICS 2
0.8
0.7
0.6
Idd(A)
Ids(A),GM(S)
2
Vds=10V
Tc=-25~+75°C
-25°C
+25°C
2.5
2.0
1.5
1.0
0.5
0.0
4
Idd
0.5
0.4
0.3
0.2
0.1
0.0
1
+75°C
0
2
3
4
Vgs(V)
5
6
6
8
10
Vdd(V)
12
14
Publication Date : Oct．2011
3
ηd(%)
50
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
Po
80
ηd
60
< Silicon RF Power MOS FET (Discrete)
>
RD01MUS2
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
TEST CIRCUIT(f=520MHz)
Vgg
C1
11mm
W
Vdd
C2
10μF、50V
W
18mm
68pF
5mm
W
4.7kOHM
RD01MUS2
6.5mm
4mm
RF-in
62pF
30mm
24pF
13mm
4mm
68 OHM
240pF
5.5mm
3pF
L4
3mm
17.5mm
25.5mm
62pF
4mm
RF-OUT
10pF
L1：Enameled wire 5 Turns、D：0.43mm、2.46mmO.D
C1、C2:1000½F、0.022μF in parallel
Note:Boad material Glass epoxi substrate
Micro strip line width=1.0mm、50 OHM、er:4.8、t=0.6mm
INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
520MHz Zin* Zout*
Zo=50
Vdd=7.2V, Idq=100mA(Vgg adj.),Pin=0.03W
520MHz Zin*
Zin* =3.11+j11.56
Zout*=11.64+j4.74
520MHz Zout*
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of output impedance
Publication Date : Oct．2011
4
< Silicon RF Power MOS FET (Discrete)
>
RD01MUS2
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
RD01MSU2 S-PARAMETER DATA (@Vdd=7.2V, Id=100mA)
Freq.
[MHz]
100
150
175
200
250
300
350
400
450
500
520
550
600
650
700
750
800
850
900
950
1000
1050
1100
S11
(mag)
0.941
0.881
0.863
0.844
0.820
0.813
0.807
0.807
0.809
0.810
0.812
0.813
0.820
0.822
0.831
0.837
0.842
0.847
0.853
0.857
0.862
0.865
0.870
(ang)
-83.9
-107.9
-116.7
-123.9
-134.4
-142.3
-148.3
-152.7
-156.9
-160.0
-161.2
-163.1
-165.6
-168.0
-170.1
-172.1
-174.0
-176.0
-177.9
-179.6
178.9
177.2
175.6
S21
(mag)
18.598
14.425
12.863
11.496
9.351
7.854
6.682
5.797
5.096
4.487
4.286
3.996
3.595
3.231
2.944
2.686
2.451
2.255
2.076
1.915
1.769
1.645
1.526
(ang)
128.5
112.0
105.7
100.2
91.4
84.1
77.7
72.5
67.0
62.7
61.0
58.1
54.1
50.4
46.8
43.2
40.0
36.6
33.6
30.7
28.0
25.5
23.2
(mag)
0.046
0.052
0.054
0.054
0.054
0.053
0.053
0.051
0.048
0.047
0.046
0.045
0.041
0.040
0.038
0.035
0.033
0.030
0.027
0.025
0.022
0.020
0.017
S12
(ang)
36.0
21.1
15.3
10.8
3.0
-4.3
-7.8
-12.7
-17.1
-20.0
-21.0
-24.7
-25.0
-29.2
-31.4
-33.6
-35.2
-37.7
-37.8
-37.4
-37.8
-37.5
-34.9
(mag)
0.761
0.660
0.632
0.606
0.575
0.566
0.569
0.574
0.588
0.604
0.609
0.620
0.637
0.653
0.672
0.686
0.703
0.717
0.731
0.742
0.757
0.766
0.778
S22
(ang)
-65.2
-85.2
-92.3
-98.0
-107.2
-114.1
-119.4
-123.7
-127.7
-131.0
-132.4
-134.3
-137.2
-139.7
-142.4
-144.6
-147.1
-149.3
-151.3
-153.6
-155.5
-157.6
-159.3
RD01MSU2 S-PARAMETER DATA (@Vdd=12.5V, Id=100mA)
Freq.
[MHz]
100
150
175
200
250
300
350
400
450
500
520
550
600
650
700
750
800
850
900
950
1000
1050
1100
S11
(mag)
0.957
0.902
0.884
0.867
0.843
0.831
0.824
0.821
0.823
0.824
0.826
0.825
0.829
0.833
0.839
0.843
0.849
0.854
0.858
0.862
0.869
0.870
0.876
(ang)
-79.3
-103.4
-112.7
-120.1
-131.4
-139.8
-146.1
-150.9
-155.3
-158.6
-160.0
-161.9
-164.4
-167.2
-169.4
-171.5
-173.6
-175.4
-177.2
-179.0
179.4
177.6
175.9
S21
(mag)
18.576
14.762
13.236
11.888
9.751
8.210
7.005
6.079
5.343
4.726
4.523
4.226
3.792
3.429
3.117
2.837
2.597
2.397
2.196
2.034
1.890
1.745
1.625
(ang)
131.4
114.9
108.3
102.6
93.5
86.0
79.5
74.1
68.6
64.2
62.2
59.6
55.6
51.5
47.7
44.2
41.1
37.6
34.7
31.8
29.0
26.2
23.4
(mag)
0.041
0.049
0.049
0.051
0.051
0.050
0.050
0.048
0.046
0.043
0.044
0.042
0.040
0.037
0.035
0.033
0.030
0.028
0.026
0.022
0.020
0.018
0.017
S12
(ang)
40.9
24.5
17.9
13.0
6.1
-1.5
-6.4
-11.2
-14.5
-19.2
-19.3
-21.9
-23.9
-27.8
-30.5
-31.2
-34.9
-35.3
-35.7
-37.5
-37.4
-37.7
-33.9
(mag)
0.740
0.642
0.615
0.592
0.559
0.553
0.553
0.559
0.573
0.589
0.594
0.605
0.622
0.639
0.656
0.675
0.691
0.705
0.718
0.732
0.745
0.757
0.770
S22
(ang)
-59.4
-78.6
-85.4
-91.3
-100.5
-107.6
-112.9
-117.9
-122.0
-125.5
-127.1
-129.0
-132.0
-134.9
-137.8
-140.1
-143.0
-145.2
-147.6
-149.6
-151.9
-154.1
-156.0
Publication Date : Oct．2011
5
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