TAT2814A
DOCSIS 3.0 / Edge QAM Variable Gain Amplifier
Applications
Integrated DOCSIS 3.0 / Edge QAM RF Amplifier chain
Forward path 45 – 1003 MHz variable-gain applications
Product Features
Meets DOCSIS 3.0 with +4 dB typical performance
margin
< 5 Watt nominal power consumption
Low-reflection differential input/output stages
18 dB typical return loss across entire gain range
Variable gain attenuator: 18 dB typical range
30 dB typical max gain
+49 dBm typical OIP3
2.7 dB typical noise figure
Typical Input stage bias: 5 V, 290 mA
Typical Output stage bias: 8 V, 415 mA
48-pin 7x7mm QFN laminate package
General Description
The TAT2814A is an RFIC for DOCSIS 3.0 Output
Sections, such as CMTS and Edge QAM. It combines a
low-reflection differential input stage, a variable gain
step attenuator and an efficient output amplifier to
provide significant reduction in power consumption and
PC board space. It replaces circuitry requiring up to 10x
the board space and 2x the power.
The TAT2814A meets the stringent DOCSIS 3.0 output
linearity specifications with extra margin to overcome
additional losses before the output connector.
The TAT2814A is packaged in an industry standard 7x7
mm 48-pin QFN and consumes 5 W between a 5 V input
amplifier supply and an 8 V output amplifier supply. The
TAT2814A utilizes proven GaAs pHEMT to optimize
performance and cost. It allows the designer to optimize
output stage voltage to significantly reduce power
consumption in Edge QAM applications.
Functional Block Diagram
Ordering Information
Part No.
TAT2814A1L
TAT2814A1L
-EB
Description
DOCSIS 3.0 Edge QAM Variable Gain
Amplifier
(lead-free/RoHS compliant 7x7 QFN laminate Pkg)
DOCSIS 3.0 Edge QAM Variable Gain
Amplifier Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.
Data Sheet: Rev D 05-03-12
© 2012 TriQuint Semiconductor, Inc.
-
1 of 11
-
Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
®
TAT2814A
DOCSIS 3.0 / Edge QAM Variable Gain Amplifier
Specifications
Absolute Maximum Ratings
Parameter
1
Storage Temperature
Device Voltage
1.
2.
Recommended Operating Conditions
Parameter
V
DD
- stage 1
V
PA
– stage 2
Operating Case Temp
T
J
(for >10
6
hours MTTF)
2
Rating
-40 to +100
o
C
+10 V
Min
-20
Typ
5
8
Max Units
+85
150
V
V
o
C
o
C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
T
J
for typical V
DD
= 115
o
C.
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: ground paddle temp = 25 ºC, output stage V
PA
= +8V, includes input and output balun losses.
Parameter
Operational Frequency Range
Gain at 1003 MHz
Gain Variation over Temp
Gain Flatness
Gain Slope
Attenuator Range
Input Return Loss
Output Return Loss
EQAM Vout
Four Channel ACPR on a Single Port
EQAM Vout
Single Channel Harmonics
Output P1dB
Output IP3
Noise Figure
1
st
stage current, at 5 V
2
nd
stage current, at 8 V
Thermal Resistance (junction to case)
jc
Conditions
See Note 1
See Note 2
See Note 3
See Note 4
Max Gain - Min Gain
See Note 1
See Note 1
Adjacent
5,6
Next-adjacent channel
5,7
Third-adjacent channel
5,8
See Notes 5 and 9
Min
45
27.5
Typical
30
1.25
+/- 0.25
-1.0
18
18
20
56.5
Max
1003
32
± 0.5
Units
MHz
dB
dB
dB
dB
dB
dB
dB
dBmV/ch
-1.4
55.0
63.0
65.0
dBmV
See Note 10
28
49
2.7
290
415
16.8
330
440
dBm
dBm
dB
mA
mA
o
C/W
Notes:
1. I
AGC
set to 1 mA.
2. Maximum gain deviation within passband with ground paddle temp. range of -20°C to +85°C relative to +45°C.
3. Peak deviation from straight line across full band.
4. Max slope of best fit straight line over all attenuator settings.
5. Production tested at 66 MHz, 330 MHz, and 990 MHz.
6. Adjacent channel (750 kHz from channel block edge to 6 MHz from channel block edge) better than -60 dBc.
7. Next-adjacent channel (6 MHz from channel block edge to 12 MHz from channel block edge) better than -63 dBc.
8. Third-adjacent channel (12 MHz from channel block edge to 18 MHz from channel block edge) better than -65 dBc.
9. In each of 2N contiguous 6 MHz channels or in each of 3N contiguous 6 MHz channels coinciding with 2
nd
harmonic and with 3
rd
harmonic components, respectively (up to 1002 MHz) better than -63 dBc.
10. 150 MHz tone spacing at 8 dBm/tone.
Data Sheet: Rev D 05-03-12
© 2012 TriQuint Semiconductor, Inc.
-
2 of 11
-
Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
®
TAT2814A
DOCSIS 3.0 / Edge QAM Variable Gain Amplifier
Application Circuit 45-1003 MHz
VPRE
L6
R4
SUBCKT
C26
L5
C9
U3
C15
RF
INPUT
L1
2
C3
C1
4
48
1
2
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
R11
SUBCKT
R1
3
4
5
3
1
C2
C10
VPRE
L7
C35
PD1
C4
R3
6
7
8
9
10
11
12
TAT2814
13
14
15
16
17
18
19
20
21
22
23
24
31
30
29
28
27
26
25
R10
C14
C36
VPRE
R7
SUBCKT
ID=U5
NET="MBT3904"
R12
L14
L12
R2
VPA
R16
6
1
C19
C20
C16
1
U4
SUBCKT
L16
3
RF
OUTPUT
VAGC
R34
2
4
5
C17
2
R13
3
C21
4
R31
U5
R29
C13
VPA
PD1
VAGC
VPRE
L18
C41
C35
VPA
8
7
6
5
C7
VAGC
PD1
1
2
3
4
L15
C8
R24
C22
L17
C23
GND
SUBCKT
VPRE
J1
Data Sheet: Rev D 05-03-12
© 2012 TriQuint Semiconductor, Inc.
-
3 of 11
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Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
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TAT2814A
DOCSIS 3.0 / Edge QAM Variable Gain Amplifier
Layout Drawing
Bill of Material
Ref Des
U1
C1, C2, C20, C21
C3, C4, C19, C26,
C35
C7, C8, C22, C23,
C35, C41
C9, C10, C13, C14,
C15, C16, C17, R7,
R10, R12
L1
L16, R2, R13
L5
L6, L7
L12, L14
L15, L17, L18
R1
R3, R4
R11
R16
R29
R31
R34
U3, U4
U5
0.01 uF
1000 pF
0.01 uF
DNP
Value
Description
Variable Gain Amplifier, QFN 7x7
Ceramic Cap, 0402, X7R, 16V, 10%
Ceramic Cap, 0402, 5%
Ceramic Cap, 0603, X7R, 50V,5%
No Load Parts
Manufacturer
TriQuint
Various
Various
Various
Part Number
TAT2814A
1.8 nH
0
420 nH
560 nH
500 nH
0.9 uH
1.8
2.5 k
560
12 k
36
1.0
1.27 k
1:1
NPN
Ind, wirewound, 0402, 5%
Res, thin film, 0402
Ind, wirewound, 0402, 5%
Ind, wirewound, 0603, 5%
Ind, wirewound, 1206, 5%
Ind, Ferrite, 1008, 10%
Res, thin film, 0805, 1/4 W 5%
Res, thin film, 0402, 5%
Res, thin film, 0402, 5%
Res, thin film, 0402, 5%
Res, thin film, 0402, 5%
Res, thin film, 0402, 5%
Res, thin film, 0402, 5%
Transformer, 50-1200 MHz
Trans, dual NPN, SOT363
Various
Various
Coilcraft
Coilcraft
Murata
Various
Various
Various
Various
Various
Various
Various
Various
M/A-COM
Various
0402AF-421XJLU
0603AF-561XJRU
LQH31HNR50K
MABA-009210-CT1760
Data Sheet: Rev D 05-03-12
© 2012 TriQuint Semiconductor, Inc.
-
4 of 11
-
Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
®
TAT2814A
DOCSIS 3.0 / Edge QAM Variable Gain Amplifier
Typical Performance 40-1000 MHz
Gain
33.0
Gain vs AGC Current, 500MHz
32
28
32.0
Gain (dB)
30.0
29.0
28.0
-20C
+25C
+85C
Gain (dB)
400
600
Frequency (MHz)
800
1000
31.0
24
20
16
12
8
27.0
0
200
0
8
16
24
32
40
AGC Current (mA)
Noise Figure
14
12
Noise Figure (dB)
36mA
21mA
11mA
1mA
Noise Figure Over Temperature, I
AGC
= 1mA
4.0
3.5
Noise Figure (dB)
10
3.0
8
6
4
2
0
0
200
2.5
2.0
1.5
1.0
0.5
0.0
85C
25C
-20C
400
600
800
1000
0
200
400
600
800
1000
Frequency (MHz)
Frequency (MHz)
Return Loss
0
-5
Return Loss (dB)
AGC Current = 1mA
Harmonics
-50
-55
-60
-65
-70
-75
-80
-85
-90
-95
-100
DOCSIS+4
-20C
+25C
+85C
-10
-15
-20
-25
-30
Harmonic (dBc)
S11
S22
2x330MHz
3x66MHz
3x330MHz
2x66MHz
2x500MHz
0
200
400
600
800
1000
100
300
500
700
900
1100
Frequency (MHz)
Frequency (MHz)
Data Sheet: Rev D 05-03-12
© 2012 TriQuint Semiconductor, Inc.
-
5 of 11
-
Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
®
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